Position: Home  > All Categories> Integrated Circuits (ICs) > STP190NF04

STP190NF04

Features: ` TYPICAL RDS(on) =3.9 m` STANDARD THRESHOLD DRIVE` 100% AVALANCHE TESTEDApplication· HIGH CURENT, HIGH SWITCHING SPEED· AUTOMOTIVESpecifications Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 40 V VDGR Drain-gate Voltage (RGS = 20 k) 40 V ...

product image

STP190NF04 Picture
See larger image
SeekIC No. : 004508346 Detail

STP190NF04: Features: ` TYPICAL RDS(on) =3.9 m` STANDARD THRESHOLD DRIVE` 100% AVALANCHE TESTEDApplication· HIGH CURENT, HIGH SWITCHING SPEED· AUTOMOTIVESpecifications Symbol Parameter Value Unit ...

STP190NF04 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
STP190NF04
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/24

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

` TYPICAL RDS(on) =3.9 m
` STANDARD THRESHOLD DRIVE
` 100% AVALANCHE TESTED


Application

 · HIGH CURENT, HIGH SWITCHING SPEED
 · AUTOMOTIVE


Specifications

Symbol Parameter
Value
Unit
VDS Drain-source Voltage (VGS = 0)
40
V
VDGR Drain-gate Voltage (RGS = 20 k)
40
V
VGS Gate- source Voltage
± 20
V
ID(`) Drain Current (continuos) at TC = 25
120
A
ID Drain Current (continuos) at TC = 100
120
A
IDM(``) Drain Current (pulsed)
480
A
Ptot Total Dissipation at TC = 25
310
W
Derating Factor
2.07
W/
dv/dt (1) Peak Diode Recovery voltage slope
7
V/ns
EAS(1) Single Pulse Avalanche Energy
860
mJ
Tstg Storage Temperature
-55 to 175

Tj
 Max. Operating Junction Temperature
(`) Current limited by package
(``) Pulse width limited by safe operating area.
1) ISD 190A, di/dt 600A/s, VDDV(BR)DSS, Tj TJMAX


Description

This Power MOSFET STP190NF04 is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance,rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Optical Inspection Equipment
AA924
A21K4B
Cables, Wires
821-0814-a
415-0100-150
Inductors, Coils, Chokes
DR127-330-R
SD53-100-R
Sensors, Transducers
GP2Y0D340K
PAN3509DH-TXWA
Filters
PICO2205A
PICO2204A
Static Control, ESD, Clean Room Products
DPA5
PA800-A41
View more