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MFG:ST  Package Cooled:TO-220  D/C:06+  

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Part Number: STP190NF04

 

MFG: ST

Package Cooled: TO-220

D/C: 06+

Description: This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" s...


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STP190NF04 General Description


This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance,rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

STP190NF04 Maximum Ratings

Symbol Parameter
Value
Unit
VDS Drain-source Voltage (VGS = 0)
40
V
VDGR Drain-gate Voltage (RGS = 20 k)
40
V
VGS Gate- source Voltage
± 20
V
ID(`) Drain Current (continuos) at TC = 25
120
A
ID Drain Current (continuos) at TC = 100
120
A
IDM(``) Drain Current (pulsed)
480
A
Ptot Total Dissipation at TC = 25
310
W
Derating Factor
2.07
W/
dv/dt (1) Peak Diode Recovery voltage slope
7
V/ns
EAS(1) Single Pulse Avalanche Energy
860
mJ
Tstg Storage Temperature
-55 to 175

Tj
 Max. Operating Junction Temperature
(`) Current limited by package
(``) Pulse width limited by safe operating area.
1) ISD 190A, di/dt 600A/s, VDDV(BR)DSS, Tj TJMAX

STP190NF04 Features

` TYPICAL RDS(on) =3.9 m
` STANDARD THRESHOLD DRIVE
` 100% AVALANCHE TESTED

STP190NF04 Typical Application

 · HIGH CURENT, HIGH SWITCHING SPEED
 · AUTOMOTIVE

STP190NF04 datasheet

STP190NF04
PDF/DataSheet Download

  • Datasheet: STP190NF04
  • File Size: 177169 KB
  • Manufacturer: STMICROELECTRONICS [STMicroelectronics]
  • Click here to Download

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