STP19NB20

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 200 V
Package / Case : TO-220
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 19 A
Resistance Drain-Source RDS (on) : 0.15 Ohms


Features:

 `  TYPICAL R<sub>DS(on)</sub> = 0.15
 `  EXTREMELY HIGH dv/dt CAPABILITY
 `  100% AVALANCHE TESTED
 `  NEW HIGH VOLTAGE BENCHMARK
 `  GATE CHARGE MINIMIZED


Application

 ·  HIGH CURRENT, HIGH SPEED SWITCHING
 ·  SWITH MODE POWER SUPPLIES (SMPS)
 ·  DC-AC CONVERTERS FOR TELECOM,INDUSTRIAL AND CONSUMER ENVIRONMENT


Specifications

Symbol	Parameter	Value		Unit
		STP(B)19NB20(-1)	STP19NB20FP
VDS	Drain-source Voltage (VGS = 0)	200		V
VDGR	Drain-gate Voltage (RGS = 20 k)	200		V
VGS	Gate- source Voltage	± 30		V
ID	Drain Current (continuos) at TC = 25	19	10	A
ID	Drain Current (continuos) at TC = 100	12	6.0	A
IDM()	Drain Current (pulsed)	76	76	A
Ptot	Total Dissipation at TC = 25	125	35	W
	Derating Factor	1	0.28	W/
dv/dt (1)	Peak Diode Recovery voltage slope	5.5		V/ns
VISO	Insulation Withstand Voltage (DC)	-	2500	V
Tstg	Storage Temperature	65 to 150
Tj	Max. Operating Junction Temperature	150

(•)Pulse width limited by safe operating area
(1)I_SD 19 A, di/dt 300A/s, V_DD V_(BR)DSS,T_j T_JMAX

Description

Using the latest high voltage STP19NB20 MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprieraty edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

Parameters:

Technical/Catalog Information	STP19NB20
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	19A
Rds On (Max) @ Id, Vgs	180 mOhm @ 9.5A, 10V
Input Capacitance (Ciss) @ Vds	1000pF @ 25V
Power - Max	125W
Packaging	Tube
Gate Charge (Qg) @ Vgs	40nC @ 10V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Standard
Lead Free Status	Request Inventory Verification
RoHS Status	Request Inventory Verification
Other Names	STP19NB20 STP19NB20 497 2650 5 ND 49726505ND 497-2650-5