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STP20N20

MOSFET N-Ch 200 Volt 18 Amp

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SeekIC No. : 00162442 Detail

STP20N20: MOSFET N-Ch 200 Volt 18 Amp

STP20N20 Data Sheet

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Part Number:
STP20N20
Mfg:
STMicroelectronics
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
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Upload time: 2025/12/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 18 A
Resistance Drain-Source RDS (on) : 0.125 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 18 A
Drain-Source Breakdown Voltage : 200 V
Package / Case : TO-220
Resistance Drain-Source RDS (on) : 0.125 Ohms


Features:

` TYPICAL RDS(on) = 0.10
` EXCEPTIONAL dv/dt CAPABILITY
` LOW GATE CHARGE
` 100% AVALANCHE TESTED


Application

· HIGH CURRENT SWITCHING APPLICATIONS
· HIGH EFFICIENCY DC-DC CONVERTERS
· PRIMARY SIDE SWITCH


Specifications

Symbol Parameter
Value
Unit
TO-220/DPAK
TO-220FP
VDS Collector-Source Voltage (VGS = 0 V)
200
V
VDGR Drain-gate Voltage (RGS = 20 k)

200
V
VGS Gate-Source Voltage
±20
V
ID Drain Current (continuous) at TC = 25
18
A
ID Drain Current (continuous) at TC = 100
11
A
IDM(`) Drain Current (pulsed)
72
A
PTOT Total Dissipation at TC = 25
90
25
W
  Derating Factor
0.72
0.2
W/
dv/dt(1) Peak Diode Recovery voltage slope
15
V/ns
Tj
Tstg		 Operating Junction Temperature
Storage Temperature
-55 to 150
(`) Pulse width limited by safe operating area
(1) ISD 18A, di/dt 400A/s, VDD V(BR)DSS


Description

This MOSFET series STP20N20 realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters.




Parameters:

Technical/Catalog InformationSTP20N20
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C18A
Rds On (Max) @ Id, Vgs125 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds 940pF @ 25V
Power - Max90W
PackagingTube
Gate Charge (Qg) @ Vgs39nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STP20N20
STP20N20
497 4373 5 ND
49743735ND
497-4373-5



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