STP20NE06

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220
Continuous Drain Current : 20 A
Resistance Drain-Source RDS (on) : 0.08 Ohms
Drain-Source Breakdown Voltage : 60 V


Features:

 TYPICAL R_DS(on) = 0.06
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
LOW GATE CHARGE 100
APPLICATIONORIENTED CHARACTERIZATION


Application

 HIGH CURRENT, HIGH SPEED SWITCHING
SOLENOID AND RELAY DRIVERS
MOTOR CONTROL, AUDIO AMPLIFIERS
DC-DC & DC-AC CONVERTERS
 AUTOMOTIVE ENVIRONMENT (INJECTION,ABS, AIR-BAG, LAMPDRIVERS, Etc.)


Specifications

Symbol	Parameter	Value		Unit
		STP16NB25	STP16NB25FP
VDS	Drain-source Voltage (VGS = 0)	60		V
VDGR	Drain-gate Voltage (RGS = 20 k )	60		V
VGS	Gate- source Voltage	±20		V
ID	Drain Current (continuos) at TC = 25	20	13	A
ID	Drain Current (continuos) at TC = 100	14	9	A
IDM()	Drain Current (pulsed)	80	80	A
PTOT	Total Dissipation at TC = 25	70	30	W
	Derating Factor	0.47	0.2	W/
dv/dt	Peak Diode Recovery voltage slope	7	7	V/ns
VISO	Insulation Withstand Voltage (DC)	-----	2000	V
Tstg	Storage Temperature	65 to 150
Tj	Max. Operating Junction Temperature	150

(•) Pulse width limited by safe operating area ( 1) I_SD  20 A, di/dt 300 A/ s, V_DD V_(BR)DSS, T_j T_JMAX


Description

This Power Mosfet STP20NE06 is the latest development of STMicroelectronics unique " Single Feature Size] " strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.