STP20NE06FP

Features: TYPICAL RDS(on) = 0.06 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 APPLICATIONORIENTED CHARACTERIZATIONApplicationHIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS MOTOR CONTROL, AUDIO AMPLIFIERS DC-DC & DC-AC CONVERTERSAUTOMOTIVE ENVIRONMENT ...

product image

STP20NE06FP Picture
SeekIC No. : 004508356 Detail

STP20NE06FP: Features: TYPICAL RDS(on) = 0.06 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 APPLICATIONORIENTED CHARACTERIZATIONApplicationHIGH CURRENT, HIGH SPEED SWITCHING SOLENOID A...

floor Price/Ceiling Price

Part Number:
STP20NE06FP
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/24

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

 TYPICAL RDS(on) = 0.06
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
LOW GATE CHARGE 100
APPLICATIONORIENTED CHARACTERIZATION



Application

 HIGH CURRENT, HIGH SPEED SWITCHING
SOLENOID AND RELAY DRIVERS
MOTOR CONTROL, AUDIO AMPLIFIERS
DC-DC & DC-AC CONVERTERS
 AUTOMOTIVE ENVIRONMENT (INJECTION,ABS, AIR-BAG, LAMPDRIVERS, Etc.)



Specifications

Symbol Parameter Value Unit
STP16NB25 STP16NB25FP
VDS Drain-source Voltage (VGS = 0) 60 V
VDGR Drain-gate Voltage (RGS = 20 k ) 60 V
VGS Gate- source Voltage ±20 V
ID Drain Current (continuos) at TC = 25
20
13 A
ID Drain Current (continuos) at TC = 100 14 9 A
IDM() Drain Current (pulsed) 80 80 A
PTOT Total Dissipation at TC = 25 70 30 W
  Derating Factor 0.47 0.2 W/
dv/dt Peak Diode Recovery voltage slope 7 7 V/ns
VISO Insulation Withstand Voltage (DC) ----- 2000 V
Tstg Storage Temperature 65 to 150
Tj Max. Operating Junction Temperature 150
(•) Pulse width limited by safe operating area ( 1) ISD  20 A, di/dt 300 A/ s, VDD V(BR)DSS, Tj TJMAX


Description

This STP20NE06FP Power Mosfet is the latest development of STMicroelectronics unique " Single Feature Size] " strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Optoelectronics
Crystals and Oscillators
Cable Assemblies
LED Products
Line Protection, Backups
View more