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STP20NE06LFP

Features: TYPICAL RDS(on) = 0.06 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 APPLICATIONORIENTED CHARACTERIZATIONApplicationDC MOTOR CONTROLDC-DC & DC-AC CONVERTERSSYNCHRONOUS RECTIFICATIONSpecifications Symbol Parameter Value Unit STP20NE06 STP20NE06FP...

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SeekIC No. : 004508357 Detail

STP20NE06LFP: Features: TYPICAL RDS(on) = 0.06 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 APPLICATIONORIENTED CHARACTERIZATIONApplicationDC MOTOR CONTROLDC-DC & DC-AC CONVERTERSSY...

STP20NE06LFP Data Sheet

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Part Number:
STP20NE06LFP
Supply Ability:
5000

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  • 1~5000
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  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/24

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Product Details

Description



Features:

 TYPICAL RDS(on) = 0.06  
 EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
LOW GATE CHARGE 100
APPLICATIONORIENTED CHARACTERIZATION


Application

DC MOTOR CONTROL
DC-DC & DC-AC CONVERTERS
SYNCHRONOUS RECTIFICATION


Specifications

Symbol Parameter Value Unit
STP20NE06 STP20NE06FP
VDS Drain-source Voltage (VGS = 0) 60 V
VDGR Drain-gate Voltage (RGS = 20 k ) 60 V
VGS Gate- source Voltage ±20 V
ID Drain Current (continuos) at TC = 25
 20
13 A
ID Drain Current (continuos) at TC = 100 14 9 A
IDM() Drain Current (pulsed) 80 80 A
PTOT Total Dissipation at TC = 25 70 30 W
  Derating Factor 0.47 0.2 W/
VISO Insulation Withstand Voltage (DC) ----- 2000 V
dV/dt Peak Diode Recovery voltage slope 7 V/ns
Tstg Storage Temperature 65 to 175
Tj Max. Operating Junction Temperature 175
(•) Pulse width limited by safe operating area   ( 1) ISD  20 A, di/dt   300 A/s, VDD   V(BR)DSS, Tj   TJMAX


Description

This STP20NE06LFP Power Mosfet is the latest development of STMicroelectronics unique " Single Feature Size] " strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




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