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STP20NE10

MOSFET RO 511-STP24NF10 TO-220 N-CH 100V 20A

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SeekIC No. : 00164845 Detail

STP20NE10: MOSFET RO 511-STP24NF10 TO-220 N-CH 100V 20A

STP20NE10 Data Sheet

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Part Number:
STP20NE10
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 20 A
Resistance Drain-Source RDS (on) : 0.01 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220    

Description

Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Package / Case : TO-220
Continuous Drain Current : 20 A
Resistance Drain-Source RDS (on) : 0.01 Ohms


Features:

 TYPICAL RDS(on) = 0.07
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
APPLICATION ORIENTED CHARACTERIZATION


Application

 SOLENOID AND RELAY DRIVERS
MOTOR CONTROL, AUDIO AMPLIFIERS
DC-DC CONVERTERS
AUTOMOTIVE ENVIRONMENT


Specifications

Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 100 V
VDGR Drain-gate Voltage (RGS = 20 k ) 100 V
VGS Gate- source Voltage ± 20 V
ID Drain Current (continuos) at TC = 25
 20 A
ID Drain Current (continuos) at TC = 100 14 A

IDM()

 Drain Current (pulsed) 80 A
PTOT Total Dissipation at TC = 25 90 W
  Derating Factor 0.6 W/
dv/dt (1) Peak Diode Recovery voltage slope 7 V/ns
Tstg Storage Temperature 65 to 175
Tj Max. Operating Junction Temperature 175
(•) Pulse width limited by safe operating area (1) ISD 3A, di/dt 150 A/s, VDD V(BR)DSS, Tj TJMAX


Description

This STP20NE10 Power MOSFET is the latest development of SGS-THOMSON unique "Single Feature Size]"strip-based process.The resulting transistor shows extremely high packing density for low onresistance,rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




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