STP20NF06

MOSFET N-Ch 60 Volt 20 Amp

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STP20NF06 Picture
SeekIC No. : 00162799 Detail

STP20NF06: MOSFET N-Ch 60 Volt 20 Amp

floor Price/Ceiling Price

Part Number:
STP20NF06
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/28

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 20 A
Resistance Drain-Source RDS (on) : 70 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220
Continuous Drain Current : 20 A
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 70 mOhms


Features:

TYPICAL RDS(on) = 0.06
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
175oC OPERATING TEMPERATURE
HIGH dv/dt CAPABILITY
APPLICATION ORIENTED CHARACTERIZATION



Application

DC MOTOR CONTROL
DC-DC & DC-AC CONVERTERS



Specifications

Symbol

Parameter

Value
Unit

STP20NF06

STF20NF06

VCES
Drain-source Voltage (VGS = 0)
60
V

VECR

Drain-gate Voltage (RGS = 20 k)

60

V

VGE
Gate-Emitter Voltage
± 20
V
IC
Drain Current (continuous) at TC = 25°C
20
 20(*)
A
IC
Drain Current (continuous) at TC = 100°C
14
 14(*)
A
ICM(•)
Drain Current (pulsed)
80
 80(*)
A

Ptot

Total Dissipation at TC = 25°C

60

 28

 A

 Ifm(1)

Derating Factor

0.4

 0.18

W/°C

dv/dt (1)
Peak Diode Recovery voltage slope
9
V/ns
EAS(2)

Single Pulse Avalanche Energy

120
mJ
Tstg
Storage Temperature
55 to 175
oC
 
oC
Tj
Max.Operating Junction Temperature

175




Description

This Power MOSFET STP20NF06 is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility




Parameters:

Technical/Catalog InformationSTP20NF06
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C20A
Rds On (Max) @ Id, Vgs70 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds 400pF @ 25V
Power - Max60W
PackagingTube
Gate Charge (Qg) @ Vgs18nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STP20NF06
STP20NF06
497 4374 5 ND
49743745ND
497-4374-5



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