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STP20NM50FD

MOSFET N-Ch 500 Volt 20 Amp

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SeekIC No. : 00151464 Detail

STP20NM50FD: MOSFET N-Ch 500 Volt 20 Amp

STP20NM50FD Data Sheet

floor Price/Ceiling Price

US $ 2.46~3.75 / Piece | Get Latest Price
Part Number:
STP20NM50FD
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $3.75
  • $3.11
  • $2.75
  • $2.46
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Upload time: 2025/12/17

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 20 A
Resistance Drain-Source RDS (on) : 0.25 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Package / Case : TO-220
Continuous Drain Current : 20 A
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 0.25 Ohms


Features:

` TYPICAL RDS(on) = 0.22
` HIGH dv/dt AND AVALANCHE CAPABILITIES
` 100% AVALANCHE TESTED
` LOW INPUT CAPACITANCE AND GATE CHARGE
` LOW GATE INPUT RESISTANCE
` TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS


Application

· ZVS PHASE-SHIFT FULL BRIDGE CONVERTERS FOR SMPS AND WELDING EQUIPMENT


Specifications

Symbol Parameter
Value
Unit
VDS Drain-source Voltage (VGS = 0)
500
V
VDGR Drain-gate Voltage (RGS = 20 k)
500
V
VGS Gate- source Voltage
±30
V
ID Drain Current (continuos) at TC = 25
20
A
ID Drain Current (continuos) at TC = 100
14
A
IDM(`) Drain Current (pulsed)
80
A
PTOT Total Dissipation at TC = 25
192
W
Derating Factor
1.2
W/
dv/dt (1) Peak Diode Recovery voltage slope
20
V/ns
Tstg Storage Temperature
65 to 150
Tj Max. Operating Junction Temperature
150
(`) Pulse width limited by safe operating area
(1) ISD 20A, di/dt 200 A/s, VDD V(BR)DSS, Tj TJMAX.


Description

The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fastrecovery body diode. STP20NM50FD is therefore strongly recommended for bridge topologies, in particular ZVS phaseshift converters.




Parameters:

Technical/Catalog InformationSTP20NM50FD
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C20A
Rds On (Max) @ Id, Vgs250 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds 1380pF @ 25V
Power - Max192W
PackagingTube
Gate Charge (Qg) @ Vgs53nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STP20NM50FD
STP20NM50FD
497 6739 5 ND
49767395ND
497-6739-5



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