STP20NM60

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220
Continuous Drain Current : 20 A
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Resistance Drain-Source RDS (on) : 0.29 Ohms


Features:

` TYPICAL R<sub>DS(on)</sub> = 0.25
` HIGH dv/dt AND AVALANCHE CAPABILITIES
` 100% AVALANCHE TESTED
` LOW INPUT CAPACITANCE AND GATE CHARGE
` LOW GATE INPUT RESISTANCE


Application

The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.

Specifications

Symbol	Parameter	Value		Unit
		TO-220/D²PAK/ I²PAK/TO-247	TO-220FP
VDS	Drain-source Voltage (VGS = 0)	600		V
VDGR	Drain-gate Voltage (RGS = 20 k)	600		V
VGS	Gate- source Voltage	±30		V
ID	Drain Current (continuos) at TC = 25	20	20(*)	A
ID	Drain Current (continuos) at TC = 100	12.6	12.6(*)	A
IDM(`)	Drain Current (pulsed)	80	80(*)	A
PTOT	Total Dissipation at TC = 25	190	190	W
	Derating Factor	1.2	0.36	W/
dv/dt (1)	Peak Diode Recovery voltage slope	15		V/ns
VISO	Insulation Winthstand Voltage (DC)	--	2500	V
Tstg	Storage Temperature	65 to 150
Tj	Max. Operating Junction Temperature	150

(`)Pulse width limited by safe operating area
(1) I_SD 20 A, di/dt 400 A/s, V_DD V_(BR)/DSS, T_j T_JMAX
(*) Limited only by maximum temperature allowed


Description

The STP20NM60 MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products.