STP20NM60FD

MOSFET N-Ch 600 Volt 20 Amp

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SeekIC No. : 00151465 Detail

STP20NM60FD: MOSFET N-Ch 600 Volt 20 Amp

floor Price/Ceiling Price

US $ 2.32~3.49 / Piece | Get Latest Price
Part Number:
STP20NM60FD
Mfg:
STMicroelectronics
Supply Ability:
5000

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  • $3.49
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  • Processing time
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Upload time: 2025/12/17

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 20 A
Resistance Drain-Source RDS (on) : 0.29 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220
Continuous Drain Current : 20 A
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Resistance Drain-Source RDS (on) : 0.29 Ohms


Features:

 TYPICAL RDS(on) = 0.26W
 HIGH dv/dt AND AVALANCHE CAPABILITIES
 100% AVALANCHE TESTED
 LOW INPUT CAPACITANCE AND GATE CHARGE
 LOW GATE INPUT RESISTANCE
 TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS



Application

ZVS PHASE-SHIFT FULL BRIDGE CONVERTERS FOR SMPS AND WELDING EQUIPMENT




Specifications

Symbol
Parameter
Value
Unit
     STP20NM60FD  STF20NM60D  STW20NM60FD  
VCES
Collector-Emitter Voltage (VGS = 0)
600
V

  VECR

Drain-gate Voltage (RGS = 20 kW)

600

 V
VGE
Gate-Emitter Voltage
± 30
V
IC
Collector Current (continuous) at TC = 25°C
20

20 (*)

 20

A
IC
Collector Current (continuous) at TC = 125°C
12.6

12.6 (*)

12.6

A
ICM(•)
Collector Current (pulsed)
80

80 (*)

80

A
 
Ptot
 Total Dissipation at Tc = 25 oC

192

45

214

 W

   Derating Factor

1.20

0.36

1.42

 
W/oC
 dv/dt (1)   Peak Diode Recovery voltage slope

 20

 V/ns

 VISO

  Insulation Withstand Voltage (DC)

 

 --

 

 2500

 

 --

 V

Tj
Tstg
 
Storage Temperature
Operating Junction Temperature

65 to 150

oC
 



Description

The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. STP20NM60FD is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.




Parameters:

Technical/Catalog InformationSTP20NM60FD
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C20A
Rds On (Max) @ Id, Vgs290 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds 1300pF @ 25V
Power - Max192W
PackagingTube
Gate Charge (Qg) @ Vgs37nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STP20NM60FD
STP20NM60FD
497 5395 5 ND
49753955ND
497-5395-5



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