STP210NF02

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Continuous Drain Current : 120 A
Mounting Style : Through Hole
Packaging : Tube
Drain-Source Breakdown Voltage : 20 V
Package / Case : TO-220
Resistance Drain-Source RDS (on) : 0.0032 Ohms


Features:

· TYPICAL R_DS(on) = 0.0026W
· STANDARD THRESHOLD DRIVE
· 100% AVALANCHE TESTED


Application

· HIGH CURRENT, HIGH SPEED SWITCHING
· SOLENOID AND RELAY DRIVERS
· MOTOR CONTROL, AUDIO AMPLIFIERS
· DC-DC & DC-AC CONVERTERS


Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	20	V
VDGR	Drain-gate Voltage (RGS = 20 k)	20	V
VGS	Gate- source Voltage	±20	V
ID(**)	Drain Current (continuos) at TC = 25	120	A
ID	Drain Current (continuos) at TC = 100	120	A
IDM()	Drain Current (pulsed)	480	A
PTOT	Total Dissipation at TC = 25	300	W
	Derating Factor	2.0	W/
dv/dt (1)	Peak Diode Recovery voltage slope	1	V/ns
EAS(2)	Single Pulse Avalanche Energy	2.3	J
Tstg	Storage Temperature	55 to 175
Tj	Max. Operating Junction Temperature

() Pulse width limited by safe operating area.
(**) Current Limited by Package
(1) I_SD 120A, di/dt250A/s, V_DD V_(BR)DSS, T_j T_JMAX
(2) Starting T_j = 25 oC, I_D = 60 A, V_DD = 14 V


Description

This STP210NF02 Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkabl e manufacturing reproducibility.