MOSFET N-Ch 20 Volt 120 Amp
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 20 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 120 A | ||
Resistance Drain-Source RDS (on) : | 0.0032 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220 | Packaging : | Tube |
Symbol | Parameter |
Value |
Unit |
VDS | Drain-source Voltage (VGS = 0) |
20 |
V |
VDGR | Drain-gate Voltage (RGS = 20 k) |
20 |
V |
VGS | Gate- source Voltage |
±20 |
V |
ID(**) | Drain Current (continuos) at TC = 25 |
120 |
A |
ID | Drain Current (continuos) at TC = 100 |
120 |
A |
IDM() | Drain Current (pulsed) |
480 |
A |
PTOT | Total Dissipation at TC = 25 |
300 |
W |
Derating Factor |
2.0 |
W/ | |
dv/dt (1) | Peak Diode Recovery voltage slope |
1 |
V/ns |
EAS(2) | Single Pulse Avalanche Energy |
2.3 |
J |
Tstg | Storage Temperature |
55 to 175 |
|
Tj | Max. Operating Junction Temperature |
This STP210NF02 Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkabl e manufacturing reproducibility.