Transistor Polarity
: N-Channel
Configuration
: Single
Mounting Style
: Through Hole
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Drain-Source Breakdown Voltage
: 500 V
Package / Case
: TO-220
Gate-Source Breakdown Voltage
: +/- 25 V
Continuous Drain Current
: 21.5 A
Resistance Drain-Source RDS (on)
: 0.14 Ohms
Features: · HIGH dv/dt AND AVALANCHE CAPABILITIES
· 100% AVALANCHE TESTED
· LOW INPUT CAPACITANCE AND GATE CHARGE
· LOW GATE INPUT RESISTANCEApplicationThe MDmesh™ II family is very suitable for increasing power density of high voltage converters allowing system iniaturization and higher efficiencies.
Specifications
| Symbol |
Parameter |
Value |
Unit |
TO- 220/D²PAK/
I²PAK/TO-247 |
TO-220FP |
| VDS |
Drain-source Voltage (VGS = 0) |
500 |
V |
| VDGR |
Drain-gate Voltage (RGS = 20 k) |
500 |
V |
| VGS |
Gate- source Voltage |
± 25 |
V |
| ID |
Drain Current (continuos) at TC = 25 |
22 |
22(*) |
A |
| ID |
Drain Current (continuos) at TC = 100 |
14 |
14(*) |
A |
| IDM() |
Drain Current (pulsed) |
88 |
88(*) |
A |
| PTOT |
Total Dissipation at TC = 25 |
160 |
40 |
W |
|
Derating Factor |
1.28 |
0.32 |
W/ |
| dv/dt (1) |
Peak Diode Recovery voltage slope |
15 |
V/ns |
| Tstg |
Storage Temperature |
55 to 150 |
|
Tj
|
Max. Operating Junction Temperature |
150 |
|
() Pulse width limited by safe operating area
(1) ISD 22A, di/dt 400A/s, VDD 80% V(BR)DSS.
(*) Limited only by maximum temperature allowedDescriptionThe STP25NM50N is realized with the second generation of MDmesh Technology. This revolutionary MOSFET ssociates a new vertical structure to the Company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
Parameters: | Technical/Catalog Information | STP25NM50N |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25° C | 22A |
| Rds On (Max) @ Id, Vgs | 140 mOhm @ 11A, 10V |
| Input Capacitance (Ciss) @ Vds | 2565pF @ 25V |
| Power - Max | 160W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 84nC @ 10V |
| Package / Case | TO-220-3 (Straight Leads) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STP25NM50N
STP25NM50N
497 4672 5 ND
49746725ND
497-4672-5
|
STP25NM50N Data Sheet
