MFG:ST Package Cooled:TO-220 D/C:04+
MFG: ST
Package Cooled: TO-220
D/C: 04+
Description: The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed o...
The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.
| Symbol | Parameter |
Value |
Unit | ||
|
STP2NC70Z |
STP2NC70ZFP |
STD1NC70Z STD1NC70Z-1 | |||
| VDS | Collector-Source Voltage (VGS = 0 V) |
700 |
V | ||
| VDGR | Drain-gate Voltage (RGS = 20 k) |
700 |
V | ||
| VGS | Gate-Source Voltage |
±25 |
V | ||
| ID | Drain Current (continuous) at TC = 25 |
1.4 |
1.4(*) |
1.4 |
A |
| ID | Drain Current (continuous) at TC = 100 |
0.9 |
0.9(*) |
0.9 |
A |
| IDM(`) | Drain Current (pulsed) |
5.6 |
5.6(*) |
5.6 |
A |
| Ptot | Total Dissipation at TC = 25 |
50 |
25 |
45 |
W |
| Derating Factor |
0.4 |
0.2 |
0.36 |
W/ | |
| IGS | Gate-source Current (DC) |
±50 |
mA | ||
| VESD(G-S) | Gate source ESD(HBM-C=100pF, R=1.5K) |
2000 |
V | ||
| dv/dt(1) | Peak Diode Recovery voltage slope |
3 |
V/ns | ||
| Tj Tstg |
Operating Junction Temperature Storage Temperature |
-65 to 150 -65 to 150 |
| ||
STP2NC70Z
PDF/DataSheet Download
The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device STP2NC60FP at the leading edge for what concerns swithing speed, g...
The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device STP2NC60at the leading edge for what concerns swithing speed, gate...
Price: 3.9-4.5 USD
Two-Pole, 30 Amp PC Board, Panel Mount Relay, DIP, 30A, New screw terminal version
Price: 1-1 USD
BSM300GB120DLCTRANSISTOR,IGBT POWER MODULE,INDEPENDENT,1.2KV V(BR)CES,625A I(C)
Price: 4.68-5.58 USD
MAX II Device, LQFP-100, Low-cost, low-power CPLD, 29 μA Standby current, compliant with IEEE Std....
Price: 1.8-2 USD
Connector, RJ45, 1-40Mhz -18dB, Single & Ganged Gigabit, 1,500 Vrms
Price: 1.2-3.2 USD
MicroController, 8-Bit, 40 Pin, Plastic, DIP
Price: 1-3 USD
128Kx8 bit, Low Power CMOS Static RAM, Low Data Retention Voltage, 2mV, 32-TSOP
Price: 3.6-4 USD
voltage-to-frequency converter, 14-DIP, 500kHz, ±0.05%, ADVFC32KN
Price: 1.15-1.8 USD
PCB Power Relay, Slim 5-mm width, RoHS Compliant, 10 ms Operate time, 5 ms Release time, 100 mΩ Co...
Price: 0.1-0.5 USD
Wideband RMS-DC Converter, Building Block, 20-LLC, 300MHz, 3dB
Price: 0.35-0.4 USD
Power Switch(FPS) product, DIP8, 650 V, Precision Fixed Operating Frequency, Low Start-up Current
Price: 1-10 USD
high speed, low power consumption, 8,192 words by 8-bit, CMOS static RAM, SOP
Price: 1-4 USD
HEXFET Power MOSFET, SOP8, 80 V, Low Gate-to-Drain Charge, 9.3 A
