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STP2NC70Z

Features: ` TYPICAL RDS(on) = 7.3 ` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTED` GATE CHARGE MINIMIZED` VERY LOW INTRINSIC CAPACITANCESApplication· SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION· WELDING EQUIPMENTSpecifications Symbol Parameter Value Unit...

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STP2NC70Z: Features: ` TYPICAL RDS(on) = 7.3 ` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTED` GATE CHARGE MINIMIZED` VERY LOW INTRINSIC CAPACITANCESApplication· SINGLE-ENDED SMPS IN MONITORS, COMPUTER...

STP2NC70Z Data Sheet

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Part Number:
STP2NC70Z
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

`  TYPICAL RDS(on) = 7.3
`  EXTREMELY HIGH dv/dt CAPABILITY
`  100% AVALANCHE TESTED
`  GATE CHARGE MINIMIZED
`  VERY LOW INTRINSIC CAPACITANCES


Application

·  SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION
·  WELDING EQUIPMENT


Specifications

Symbol Parameter
Value
Unit
STP2NC70Z
STP2NC70ZFP
STD1NC70Z
STD1NC70Z-1
VDS Collector-Source Voltage (VGS = 0 V)
700
V
VDGR Drain-gate Voltage (RGS = 20 k)

700
V
VGS Gate-Source Voltage
±25
V
ID Drain Current (continuous) at TC = 25
1.4
1.4(*)
1.4
A
ID Drain Current (continuous) at TC = 100
0.9

0.9(*)
0.9
A
IDM(`) Drain Current (pulsed)
5.6
5.6(*)
5.6
A
Ptot Total Dissipation at TC = 25
50
25
45
W
Derating Factor
0.4
0.2
0.36
W/
IGS Gate-source Current (DC)
±50
mA
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5K)
2000
V
dv/dt(1) Peak Diode Recovery voltage slope
3
V/ns
Tj
Tstg		 Operating Junction Temperature
Storage Temperature
-65 to 150
-65 to 150

(`) Pulse width limited by safe operating area
(1) ISD 10A, di/dt 200A/s, VDD V(BR)DSS, Tj TJMAX.
(*) Limited only by maximum temperature allowed


Description

The third generation of MESH OVERLAY™ Power MOSFETs STP2NC70Z for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.




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