STP2NK90Z

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 900 V
Continuous Drain Current : 2.1 A
Resistance Drain-Source RDS (on) : 6500 mOhms


Features:

 ` TYPICAL R<sub>DS(on)</sub> = 5
 ` EXTREMELY HIGH dv/dt CAPABILITY
 ` IMPROVED ESD CAPABILITY
 ` 100% AVALANCHE RATED
 ` GATE CHARGE MINIMIZED
 ` VERY LOW INTRINSIC CAPACITANCES
 ` VERY GOOD MANUFACTURING REPEATIBILITY


Application

 · HIGH CURRENT, HIGH SPEED SWITCHING
 · IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC


Specifications

Symbol	Parameter	Value			Unit
		STP2NK90Z	STD2NK90Z STD2NK90Z-1
VDS	Collector-Source Voltage (VGS = 0 V)	900			V
VDGR	Drain-gate Voltage (RGS = 20 k)	900			V
VGS	Gate-Source Voltage	± 30			V
ID	Drain Current (continuous) at TC = 25	2.1			A
ID	Drain Current (continuous) at TC = 100	1.3			A
IDM(`)	Drain Current (pulsed)	8.4			A
PTOT	Total Dissipation at TC = 25	70			W
	Derating Factor	0.56			W/
VESD(G-S)	Gate source ESD(HBM-C=100pF, R=1.5K)	2000			V
dv/dt(1)	Peak Diode Recovery voltage slope	4.5			V/ns
Tj Tstg	Operating Junction Temperature Storage Temperature	-55 to 150 -55 to 150

(`) Pulse width limited by safe operating area
(1) I_SD 2.1A, di/dt 200A/s, V_DD V_(BR)DSS, T_j T_JMAX.


Description

The SuperMESH™ series STP2NK90Z is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.

 

Parameters:

Technical/Catalog Information	STP2NK90Z
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	900V
Current - Continuous Drain (Id) @ 25° C	2.1A
Rds On (Max) @ Id, Vgs	6.5 Ohm @ 1.05A, 10V
Input Capacitance (Ciss) @ Vds	485pF @ 25V
Power - Max	70W
Packaging	Tube
Gate Charge (Qg) @ Vgs	27nC @ 10V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STP2NK90Z STP2NK90Z 497 4378 5 ND 49743785ND 497-4378-5