STP3NK80Z

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 2.5 A
Drain-Source Breakdown Voltage : 800 V
Resistance Drain-Source RDS (on) : 4500 mOhms


Features:

` TYPICAL R<sub>DS</sub>(on) = 3.8
` EXTREMELY HIGH dv/dt CAPABILITY
` 100% AVALANCHE TESTED
` GATE CHARGE MINIMIZED
` VERY LOW INTRINSIC CAPACITANCES
` VERY GOOD MANUFACTURING REPEATIBILITY


Application

· HIGH CURRENT, HIGH SPEED SWITCHING
· IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC
· LIGHTING


Specifications

Symbol	Parameter	Value			Unit
		STP3NK80Z	STF3NK80Z	STD3NK80Z STD3NK80Z-1
VDS	Drain-source Voltage (VGS = 0)	800			V
VDGR	Drain-gate Voltage (RGS = 20 k)	800			V
VGS	Gate- source Voltage	±30			V
ID	Drain Current (continuos) at TC = 25	2.5	2.5(*)	2.5	A
ID	Drain Current (continuos) at TC = 100	1.57	1.57(*)	1.57	A
IDM (`)	Drain Current (pulsed)	10	10(*)	10	A
Ptot	Total Dissipation at TC = 25	70	25	70	W
	Derating Factor	0.56	0.2	0.56	W/
VESD(G-S)	Gate source ESD(HBM-C=100pF, R=1.5K)	3000			V
dv/dt (1)	Peak Diode Recovery voltage slope	4.5			V/ns
VISO	Insulation Withstand Voltage (DC)	-	2500	-	V
Tj Tstg	Operating Junction Temperature Storage Temperature	-55 to 150

(`) Pulse width limited by safe operating area
(1) I_SD 2.5A, di/dt 200A/µs, V_DD V_(BR)DSS, T_j T_JMAX.
(*) Limited only by maximum temperature allowed


Description

The STP3NK80Z SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.

Parameters:

Technical/Catalog Information	STP3NK80Z
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25° C	2.5A
Rds On (Max) @ Id, Vgs	4.5 Ohm @ 1.25A, 10V
Input Capacitance (Ciss) @ Vds	485pF @ 25V
Power - Max	70W
Packaging	Tube
Gate Charge (Qg) @ Vgs	19nC @ 10V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STP3NK80Z STP3NK80Z 497 4379 5 ND 49743795ND 497-4379-5