STP50NE08

MOSFET N-Ch 80 Volt 50 Amp

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STP50NE08 Picture
SeekIC No. : 00164722 Detail

STP50NE08: MOSFET N-Ch 80 Volt 50 Amp

floor Price/Ceiling Price

Part Number:
STP50NE08
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 80 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 50 A
Resistance Drain-Source RDS (on) : 0.02 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 50 A
Package / Case : TO-220
Drain-Source Breakdown Voltage : 80 V
Resistance Drain-Source RDS (on) : 0.02 Ohms


Application

 HIGH CURRENT, HIGH SPEED SWITCHING
SOLENOID AND RELAY DRIVERS
MOTOR CONTROL, AUDIO AMPLIFIERS
DC-DC & DC-AC CONVERTERS
AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)



Specifications

Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 80 V
VDGR Drain- gate Voltage (RGS = 20 kW) 80 V
VGS Gate-source Voltage ± 20 V
ID Drain Current (continuous) at Tc = 25 50 A
ID
Drain Current (continuous) at Tc = 100
35 A
IDM(•) Drain Current (pulsed) 200 A
Ptot Total Dissipation at Tc = 25 150 W
  Derating Factor 1 W/
dv/dt (1) Peak Diode Recovery voltage slope 6 V/ns
Tstg Storage Temperature -65 to 175
Tj Max. Operating Junction Temperature 175



Description

This STP50NE08 Power MOSFET is the latest development of SGS-THOMSON unique "Single Feature Size™" strip-based  process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




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