MOSFET N-Ch 80 Volt 50 Amp
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 80 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 50 A | ||
| Resistance Drain-Source RDS (on) : | 0.02 Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
| Package / Case : | TO-220 | Packaging : | Tube |
| Symbol | Parameter | Value | Unit |
| VDS | Drain-source Voltage (VGS = 0) | 80 | V |
| VDGR | Drain- gate Voltage (RGS = 20 kW) | 80 | V |
| VGS | Gate-source Voltage | ± 20 | V |
| ID | Drain Current (continuous) at Tc = 25 | 50 | A |
| ID | Drain Current (continuous) at Tc = 100 |
35 | A |
| IDM(•) | Drain Current (pulsed) | 200 | A |
| Ptot | Total Dissipation at Tc = 25 | 150 | W |
| Derating Factor | 1 | W/ | |
| dv/dt (1) | Peak Diode Recovery voltage slope | 6 | V/ns |
| Tstg | Storage Temperature | -65 to 175 | |
| Tj | Max. Operating Junction Temperature | 175 |
This STP50NE08 Power MOSFET is the latest development of SGS-THOMSON unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.