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STP55NE06LFP

Features: *TYPICALRDS(on) = 0.018 * EXCEPTIONAL dV/dt CAPABILTY* 100% AVALANCHE TESTED* LOW GATE CHARGE 100 * HIGH dV/dt CAPABILITY* APPLICATIONORIENTED CHARACTERIZATIONApplication*DC MOTOR CONTROL* DC-DC & DC-AC CONVERTERS* SYNCHRONOUS RECTIFICATIONSpecifications Symbol Parameter Value...

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STP55NE06LFP: Features: *TYPICALRDS(on) = 0.018 * EXCEPTIONAL dV/dt CAPABILTY* 100% AVALANCHE TESTED* LOW GATE CHARGE 100 * HIGH dV/dt CAPABILITY* APPLICATIONORIENTED CHARACTERIZATIONApplication*DC MOTOR CONTROL*...

STP55NE06LFP Data Sheet

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Part Number:
STP55NE06LFP
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

* TYPICALRDS(on) = 0.018
* EXCEPTIONAL dV/dt CAPABILTY
* 100% AVALANCHE TESTED
* LOW GATE CHARGE 100
* HIGH dV/dt CAPABILITY
* APPLICATIONORIENTED
   CHARACTERIZATION


Application

* DC MOTOR CONTROL
* DC-DC & DC-AC CONVERTERS
* SYNCHRONOUS RECTIFICATION


Specifications

Symbol Parameter Value Unit
STP60NE06L STP60NE06LFP
VDS Drain-source Voltage (VGS = 0) 60 V
VDGR Drain- gate Voltage (RGS = 20 k) 60 V
VGS Gate-source Voltage ± 15 V
ID Drain Current (continuous) at Tc = 25 55 28 A
ID Drain Current (continuous) at Tc = 100 39 20 A
IDM(•) Drain Current (pulsed) 220 220 A
Ptot Total Dissipation at Tc = 25 130 35 W
  Derating Factor 0.86 0.23 W/
VISO Insulation Withstand Voltage (DC) - 2000 V
dv/dt Peak Diode Recovery voltage slope 7 V/ns
Tstg Storage Temperature -65 to 175
Tj Max. Operating Junction Temperature 175



Description

This STP55NE06LFP Power Mosfet is the latest development of SGS-THOMSON unique "Single Feature Size" process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




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