STP5N90

The STP5N90 is a kind of N-channel enhancement mode power MOS transistor.

There are some STP5N90 features as follows: (1)typical RDS(on)=1.9; (2)avalanche rugged technology; (3)100% avalanche tested; (4)repetitive avalanche data at 100; (5)low input capacitance; (6)low gate charge; (7)application oriented characterization. The typical applications include: (1)high current, high speed switching; (2)switch mode power supplies (SMPS); (3)consumer and industrial lighting; (4)DC-AC inverters for welding equipment and uninterruptible power supply (UPS).

Then is about the STP5N90 absolute maximum ratings: (1)VDS, drain-source voltage (VGS=0): 900 V; (2)VDGR, drain-gate voltage (RGS=20 k): 900 V; (3)VGS, gate-source voltage:  ±20 V; (4)ID, drain current (continuous) at TC=25: 5 A; (5)ID, drain current (continuous) at TC=100: 3 A; (6)IDM, drain current (pulsed): 20 A; (7)Ptot, total dissipation at TC=25: 125 W; (8)VISO, insulation withstand voltage (DC): 2000 V; (9)Tstg, storage temperature: -65 to 150; (10)Tj, operating junction temperature: 150.