STP5NA80FI Selling Leads, Price trend, STP5NA80FI DataSheet download, circuit diagram from SeekIC.com

Features: TYPE VDSS RDS(on) ID STP5NA80FI 800 V < 2.4 2.8A` TYPICAL RDS(on) = 1.8 ` ± 30V GATE TO SOURCE VOLTAGE RATING` 100% AVALANCHE TESTED` REPETITIVE AVALANCHE DATA AT 100` LOW INTRINSIC CAPACITANCES` GATE GHARGE MINIMIZED` REDUCED THRESHOLD VOLTAGE SPREADAppl...

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SeekIC No. : 004508473 Detail

STP5NA80FI: Features: TYPE VDSS RDS(on) ID STP5NA80FI 800 V < 2.4 2.8A` TYPICAL RDS(on) = 1.8 ` ± 30V GATE TO SOURCE VOLTAGE RATING` 100% AVALANCHE TESTED` REPETITIVE AVALANCHE ...

STP5NA80FI Data Sheet

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Part Number:: STP5NA80FI
Supply Ability:: 5000

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1~5000

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Upload time: 2025/12/24

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MOSFET TO-220AB N-CH 60V

Product Details

Description

Features:

TYPE	V_DSS	R_DS(on)	ID
STP5NA80FI	800 V	< 2.4	2.8 A

` TYPICAL R_DS(on) = 1.8
` ± 30V GATE TO SOURCE VOLTAGE RATING
` 100% AVALANCHE TESTED
` REPETITIVE AVALANCHE DATA AT 100
` LOW INTRINSIC CAPACITANCES
` GATE GHARGE MINIMIZED
` REDUCED THRESHOLD VOLTAGE SPREAD

Application

· HIGH CURRENT, HIGH SPEED SWITCHING
· SWITCH MODE POWERSUPPLIES (SMPS)
· DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE

Specifications

Symbol	Parameter	Value	Unit
V_DS	Drain-sourceVoltage(V_GS =0)	800	V
V_DGR	Drain-gateVoltage(R_GS =20k)	800	V
V_GS	Gate-sourceVoltage	±30	V
I_D	DrainCurrent(continuous)atTc =25	2.8	A
I_D	Drain Current(continuous)atTc =100	1.8	A
I_DM(`)	Drain Current(pulsed)	19	A
P_tot	Total DissipationatTC =25	45	W
	Derating Factor	0.36	W/
V_ISO	InsulationWithstandVoltage(DC)	200	V
T_stg	Storage Temperature	-65 to1 50
T_j	Max.Operating Junction Temperature	150

(•) Pulse width limited by safe operating area

Description

This series of POWER MOSFETS STP5NA80FI represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.

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STP5NA80FI

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