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STP6NB25FP

Features: TYPE VDSS RDS(on) ID STP6NB25FP 250 V < 1.1 3.7A` TYPICAL RDS(on) = 0.9 W` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTED` VERY LOW INTRINSIC CAPACITANCES` GATE CHARGE MINIMIZEDApplication· HIGH CURRENT, HIGH SPEED SWITCHING· UNINTERRUPTIBLE POWER ...

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STP6NB25FP: Features: TYPE VDSS RDS(on) ID STP6NB25FP 250 V < 1.1 3.7A` TYPICAL RDS(on) = 0.9 W` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTED` VERY LOW INTRINSIC CAPACI...

STP6NB25FP Data Sheet

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Part Number:
STP6NB25FP
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/24

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Product Details

Description



Features:

TYPE
VDSS
RDS(on)
ID
STP6NB25FP
250 V
< 1.1
3.7 A

` TYPICAL RDS(on) = 0.9 W
` EXTREMELY HIGH dv/dt CAPABILITY
` 100% AVALANCHE TESTED
` VERY LOW INTRINSIC CAPACITANCES
` GATE CHARGE MINIMIZED


Application

· HIGH CURRENT, HIGH SPEED SWITCHING
· UNINTERRUPTIBLE POWER SUPPLY (UPS)
· DC-DC & DC-AC CONVERTERS FOR TELECOM , INDUSTRIAL AND CONSUMER ENVIRONMENT


Specifications

Symbol
Parameter
FQP2NA90
Units
VDS
 Drain-Source Voltage(VGS = 0)
250
V
VDGR
 Drain-gate Voltage (RGS = 20 k)
250
V
VGS
 Gate- source Voltage
±30
V
ID
 Drain Current (continuos) at TC = 25
3.7
A
ID
 Drain Current (continuos) at TC = 100
2.3
A
IDM (`)
 Drain Current (pulsed)
24
A
PTOT
 Total Dissipation at TC = 25
30
W
 Derating Factor
0.24
W/
dv/dt (1)
 Peak Diode Recovery Voltage slope
5.5
V/ns
VISO
 Insulation Withstand Voltage (DC)
2000
Tstg
 Storage Temperature
-55 to +150
Tj
 Max. Operating Junction Temperature
150

(•)Pulse width limited by safe operating area


Description

Using the latest high voltage STP6NB25FP MESH OVERLAY] process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprieraty edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.




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