MFG:ST Package Cooled:06+ D/C:TO-220
MFG: ST
Package Cooled: 06+
D/C: TO-220
Description: The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per ...
| Symbol | Parameter | Value | Unit | |
| STP(B)6NC80Z(-1) | STP6NC80ZFP | |||
| VDS | Drain-source Voltage (VGS =0) | 800 | V | |
| VDGR | Drain-gate Voltage (RGS =20kΩ) | 800 | V | |
| VGS | Gate- source Voltage | ±25 | V | |
| ID | Drain Current (continuous) at TC = 25°C | 5.4 | 5.4(*) | A |
| ID | Drain Current (continuous) at TC =100°C | 3.4 | 3.4 (*) | A |
| IDM (· ) | Drain Current (pulsed) | 21 | 21 (*) | A |
| PTOT | Total Dissipation at TC = 25°C | 125 | 40 | W |
| Derating Factor | 1 | 0.32 | W/°C | |
| IGS | Gate-source Current | ±50 | mA | |
| VESD(G-S) | Gate source ESD(HBM-C=100pF, R=15KΩ) | 3 | KV | |
| dv/dt(1) | Peak Diode Recovery voltage slope | 3 | V/ns | |
| VISO | Insulation Withstand Voltage (DC) | 2000 | V | |
Tstg |
Storage Temperature |
-65to150 | °C | |
| Tj | Operating Junction Temperature | 150 | °C | |
STP6NC80Z
PDF/DataSheet Download
The PowerMESH(TM)II STP6NC60 - STP6NC60FPis the evolution of the first generation of MESH OVERLAY(TM). The layout re- finements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead-ing edge for what concerns swithing s...
Using the latesthigh voltageMESH OVERLAY(TM) process, STMicroelectronics has designed an advanced family of power MOSFETs STP6NB90FPwith outstanding performances. The new patent pending strip layout coupled with the Company'sproprietary edge termination stru...
Using the latesthigh voltageMESH OVERLAY(TM) process, STMicroelectronics has designed an advanced family of power MOSFETs STP6NB90 with outstanding performances. The new patent pending strip layout coupled with the Company'sproprietary edge termination struc...
Using the latest high voltage MESH OVERLAY] process, STMicroelectronics has designed an advanced family of power MOSFETs STP6NB80FPwith outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination stru...
Using the latest high voltage MESH OVERLAY] process, STMicroelectronics has designed an advanced family of power MOSFETs STP6NB80 with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination struc...
Using the latest high voltage MESH OVERLAY] process, SGS-Thomson has designed an advancd family of power MOSFETs STP6NB50FPwith outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, g...
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