STP7NB30

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 7 A
Resistance Drain-Source RDS (on) : 0.75 Ohms
Drain-Source Breakdown Voltage : 300 V


Application

HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWERSUPPLIES AND MOTOR DRIVE


Specifications

Symbol	Parameter	Value		Unit
		STP7NB30	STP7NB30FP
VDS	Drain-source Voltage (VGS = 0)	300		V
VDGR	Drain- gate Voltage(RGS = 20 k)	300		V
VGS	Gate-source Voltage	± 30		V
ID	Drain Current (continuous) at Tc = 25 oC	7	4	A
ID	Drain Current (continuous) at Tc = 100 oC	4.4	2.5	A
IDM(•)	Drain Current (pulsed)	28	28	A
Ptot	Total Dissipation at Tc = 25 oC	85	30	W
	Derating Factor	0.68	0.24	W/oC
dv/dt (1)	Peak Diode Recovery voltage slope	5.5	5.5	V/ns
VISO	Insulation Withstand Voltage(DC)	-	2000	V
Tstg	Storage Temperature	-65 to 150		oC
Tj	Max. Operating Junction Temperature	150		oC

Description

Using the latest high voltage MESH OVERLAY^TM process, STMicroelectronics has designed an advanced family of power MOSFETs STP7NB30 with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.