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STP7NB80

Features: TYPE VDSS RDS(on) ID STP7NB80 800 V < 1.5 6.5 A` TYPICAL RDS(on) = 1.2 ` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTED` VERY LOW INTRINSIC CAPACITANCES` GATE CHARGE MINIMIZEDApplication· HIGH CURRENT, HIGH SPEED SWITCHING· SWITCH MODE POWER SUPPL...

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SeekIC No. : 004508525 Detail

STP7NB80: Features: TYPE VDSS RDS(on) ID STP7NB80 800 V < 1.5 6.5 A` TYPICAL RDS(on) = 1.2 ` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTED` VERY LOW INTRINSIC CAPACIT...

STP7NB80 Data Sheet

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Part Number:
STP7NB80
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/24

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Product Details

Description



Features:

TYPE
VDSS
RDS(on)
ID
STP7NB80
800 V
< 1.5
6.5 A

` TYPICAL RDS(on) = 1.2
` EXTREMELY HIGH dv/dt CAPABILITY
` 100% AVALANCHE TESTED
` VERY LOW INTRINSIC CAPACITANCES
` GATE CHARGE MINIMIZED


Application

· HIGH CURRENT, HIGH SPEED SWITCHING
· SWITCH MODE POWER SUPPLIES(SMPS)
· DC-AC CONVERTERS FOR WELDING EQUIPMENTAND UNINTERRUPTIBLE POWERSUPPLIES AND MOTOR DRIVE


Specifications

Symbol
Parameter
Value
Units
VDSS
 Drain-Source Voltage
800
V
VDGR
 Drain- gate Voltage (RGS = 20 kW)
800
V
VGS
 Gate-source Voltage
±30
V
ID
 Drain Current (continuous) at Tc = 25
6.5
A
ID
 Drain Current (continuous) at Tc = 100
4.1
A
IDM(•)
 Drain Current (pulsed)
26
A
Ptot
 Total Dissipation at Tc = 25
135
W
 Derat ing Factor
1.08
W/
dv/dt (1)
 Peak Diode Recovery voltage slope
4.5
V/ns
VISO
 Insulat ion Withstand Voltage (DC)
-
Tstg
 Storage Temperature
-65 to +150
Tj
 Max. Operating Junction TemperatureC
150

(•) Pulse width limited by safe operating area

( 1) ISD 6.5A, di/dt 200 A/s, VDD V(BR)DSS, Tj TJMAX


Description

Using the latest high voltage MESH OVERLAY] process, STP7NB80 STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the  lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.




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