STP7NB80FP Selling Leads, Price trend, STP7NB80FP DataSheet download, circuit diagram from SeekIC.com

Features: TYPE VDSS RDS(on) ID STP7NB80FP 800 V < 1.5 6.5 A` TYPICAL RDS(on) = 1.2 ` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTED` VERY LOW INTRINSIC CAPACITANCES` GATE CHARGE MINIMIZEDApplication· HIGH CURRENT, HIGH SPEED SWITCHING· SWITCH MODE POWER SUP...

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SeekIC No. : 004508526 Detail

STP7NB80FP: Features: TYPE VDSS RDS(on) ID STP7NB80FP 800 V < 1.5 6.5 A` TYPICAL RDS(on) = 1.2 ` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTED` VERY LOW INTRINSIC CAPAC...

STP7NB80FP Data Sheet

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Part Number:: STP7NB80FP
Supply Ability:: 5000

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1~5000

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Upload time: 2025/12/24

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Product Details

Description

Features:

TYPE	V_DSS	R_DS(on)	I_D
STP7NB80FP	800 V	< 1.5	6.5 A

` TYPICAL R_DS(on) = 1.2
` EXTREMELY HIGH dv/dt CAPABILITY
` 100% AVALANCHE TESTED
` VERY LOW INTRINSIC CAPACITANCES
` GATE CHARGE MINIMIZED

Application

· HIGH CURRENT, HIGH SPEED SWITCHING
· SWITCH MODE POWER SUPPLIES(SMPS)
· DC-AC CONVERTERS FOR WELDING EQUIPMENTAND UNINTERRUPTIBLE POWERSUPPLIES AND MOTOR DRIVE

Specifications

Symbol	Parameter	Value	Units
V_DSS	Drain-Source Voltage	800	V
V_DGR	Drain- gate Voltage (R_GS = 20 kW)	800	V
V_GS	Gate-source Voltage	±30	V
I_D	Drain Current (continuous) at Tc = 25	6.5(*)	A
I_D	Drain Current (continuous) at Tc = 100	4.1(*)	A
I_DM(•)	Drain Current (pulsed)	26	A
P_tot	Total Dissipation at Tc = 25	40	W
	Derat ing Factor	0.32	W/
dv/dt (1)	Peak Diode Recovery voltage slope	4.5	V/ns
V_ISO	Insulat ion Withstand Voltage (DC)	2000
T_stg	Storage Temperature	-65 to +150
T_j	Max. Operating Junction TemperatureC	150

(•) Pulse width limited by safe operating area

( 1) I_SD 6.5A, di/dt 200 A/s, V_DD V_(BR)DSS, Tj T_JMAX
( *) Limited only maximum temperature allowed

Description

Using the latest high voltage MESH OVERLAY] process, STP7NB80FP STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

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STP7NB80FP

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