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STP7NC40

MOSFET N-Ch 400 Volt 7 Amp

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SeekIC No. : 00166789 Detail

STP7NC40: MOSFET N-Ch 400 Volt 7 Amp

STP7NC40 Data Sheet

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Part Number:
STP7NC40
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 400 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 6 A
Resistance Drain-Source RDS (on) : 0.75 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220    

Description

Packaging :
Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 6 A
Package / Case : TO-220
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 0.75 Ohms
Drain-Source Breakdown Voltage : 400 V


Application

HIGH-EFFICIENCY DC-DC CONVERTERS
UPS AND MOTOR CONTROL


Specifications

Symbol
Parameter
Value
Unit
VDS
 Drain-source Voltage (VGS = 0)
400
V
VDGR
 Drain- gate Voltage(RGS = 20 k)
400
V
VGS
 Gate-source Voltage
± 30
V
ID
 Drain Current (continuous) at Tc = 25 oC
6
A
ID
 Drain Current (continuous) at Tc = 100 oC
4
A
IDM(•)
 Drain Current (pulsed)
24
A
Ptot
 Total Dissipation at Tc = 25 oC
100
W
 Derating Factor
0.8
W/oC
dv/dt (1) Peak Diode Recovery voltage slope
3
V/ns
Tstg
 Storage Temperature
-65 to 150
oC
Tj
 Max. Operating Junction Temperature
150
oC



Description

The STP7NC40 PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.




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