STP7NC80Z

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220
Gate-Source Breakdown Voltage : +/- 25 V
Drain-Source Breakdown Voltage : 800 V
Continuous Drain Current : 6.5 A
Resistance Drain-Source RDS (on) : 1.3 Ohms


Features:

`TYPICAL RDS(on) = 1.3
` EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES
`100% AVALANCHE TESTED
`VERY LOW GATE INPUT RESISTANCE
`GATE CHARGE MINIMIZED


Application

· SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION
· WELDING EQUIPMENT


Specifications

Symbol	Parameter	Value		Unit
		STP7NC80Z STB7NC80Z STB7NC80Z-1	STP7NC80ZFP
VDS	Drain-source Voltage (VGS = 0)	800		V
VDGR	Drain-gate Voltage (RGS = 20 k)	800		V
VGS	Gate- source Voltage	±25		V
ID	Drain Current (continuos) at TC = 25°C	6.5	6.5(*)	A
ID	Drain Current (continuos) at TC = 100°C	4	4(*)	A
IDM (`)	Drain Current (pulsed)	26	26(*)	A
PTOT	Total Dissipation at TC = 25°C	135	40	W
	Derating Factor	1.08	0.32	W/°C
IGS	Gate-source Current	±50		mA
VESD(G-S)	Gate source ESD(HBM-C=100pF, R=15K)	3		KV
dv/dt	Peak Diode Recovery voltage slope	3		V/ns
VISO	Insulation Winthstand Voltage (DC)	-	2000	V
Tstg	Storage Temperature	65 to 150		°C
Tj	Max. Operating Junction Temperature	150		°C

(`) Pulse width limited by safe operating area
(*) Limited only by maximum temperature allowed


Description

The third generation of STP7NC80Z MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.