MOSFET N-Ch 800 Volt 5.2 A Zener SuperMESH
STP7NK80Z: MOSFET N-Ch 800 Volt 5.2 A Zener SuperMESH
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Features: · TYPICAL RDS(on) = 1.1W· EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIO...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 800 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 5.2 A | ||
Resistance Drain-Source RDS (on) : | 1.8 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220 | Packaging : | Tube |
· TYPICAL RDS(on) = 1.5 W
· EXTREMELY HIGH dv/dt CAPABILITY
· 100% AVALANCHE TESTED
· GATE CHARGE MINIMIZED
· VERY LOW INTRINSIC CAPACITANCES
· VERY GOOD MANUFACTURING REPEATIBILITY
· HIGH CURRENT, HIGH SPEED SWITCHING
· SMPS FOR INDUSTRIAL APPLICATION.
· LIGHTING (PREHEATING)
Symbol |
Parameter |
Value |
Unit | |
STP7NK80Z STB7NK80Z STB7NK80Z-1 |
STP7NK80ZFP |
|||
VDS |
Drain-source Voltage (VGS = 0) |
800 |
V | |
VDGR |
Drain-gate Voltage (RGS = 20 kW) |
800 |
V | |
VGS |
Gate- source Voltage |
± 30 |
V | |
ID |
Drain Current (continuous) at TC = 25 |
5.2 |
5.2 (*) |
A |
ID |
Drain Current (continuous) at TC = 100°C |
3.3 |
3.3 (*) |
A |
IDM (` ) |
Drain Current (pulsed) |
20.8 |
20.8 (*) |
A |
PTOT |
Total Dissipation at TC = 25 |
125 |
30 |
W |
Derating Factor |
1 |
0.24 |
W/ | |
VESD(G-S) |
Gate source ESD(HBM-C=100pF, R=1.5KW) |
4000 |
V | |
dv/dt (1) |
Peak Diode Recovery voltage slope |
4.5 |
V/ns | |
VISO |
Insulation Withstand Voltage (DC) |
- |
2500 |
V |
Tj Tstg |
Operating Junction Temperature Storage Temperature |
-55 to 150 -55 to 150 |
|
The SuperMESH™ series STP7NK80Z is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
Technical/Catalog Information | STP7NK80Z |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25° C | 5.2A |
Rds On (Max) @ Id, Vgs | 1.8 Ohm @ 2.6A, 10V |
Input Capacitance (Ciss) @ Vds | 1138pF @ 25V |
Power - Max | 125W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 56nC @ 10V |
Package / Case | TO-220-3 (Straight Leads) |
FET Feature | Standard |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | STP7NK80Z STP7NK80Z |