STP95N04

MOSFET STripFET MOSFET

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STP95N04 Picture
SeekIC No. : 00160452 Detail

STP95N04: MOSFET STripFET MOSFET

floor Price/Ceiling Price

Part Number:
STP95N04
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/22

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 40 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 5.4 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Drain-Source Breakdown Voltage : 40 V
Packaging : Tube
Continuous Drain Current : 80 A
Package / Case : TO-220
Resistance Drain-Source RDS (on) : 5.4 m Ohms


Features:

·  STANDARD THRESHOLD DRIVE
·  100% AVALANCHE TESTED



Application

·  HIGH CURRENT,SWITCHING APPLICATION
·  AUTOMOTIVE



Specifications

Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS=0) 40 V
VGS Gate-Source Voltage ± 20 V
ID Note 1 Drain Current (continuous) at TC = 25°C 80 A
ID Drain Current (continuous) at TC = 100°C 65 A
IDM Note 2 Drain Current (pulsed) 320 A
PTOT Total Dissipation at TC = 25°C 110 W
  Derating Factor 0.73 W/°C
dv/dt Note 3 Peak Diode Recovery voltage slo 8 V/ns
EAS Note 4 Single Pulse Avalanche Energy 400 mJ
Tj
Tstg
Operating Junction Temperature
Storage Temperature
-55 to 175 °C
(1) Current limited by package
(2) Pulse width limited by safe operating area
(3) ISD 80 A, di/dt 400A/s, VDS V(BR)DSS, Tj Tjmax
(4) Starting Tj=25°C, Id =40A, Vdd=30V
(5) When mounted on 1inch² FR4 2Oz Cu board
(6)Pulsed: pulse duration = 300s, duty cycle 1.5%



Description

This N-Channel enhancement mode MOSFET STP95N04 is the latest refinement of STMicroelectronic unique "Single Feature Size™" strip-based process with less critical aligment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and low gate charge.




Parameters:

Technical/Catalog InformationSTP95N04
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25° C80A
Rds On (Max) @ Id, Vgs6.5 mOhm @ 40A, 10V
Input Capacitance (Ciss) @ Vds 2200pF @ 25V
Power - Max110W
PackagingTube
Gate Charge (Qg) @ Vgs54nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STP95N04
STP95N04
497 5132 5 ND
49751325ND
497-5132-5



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