MFG:ST Package Cooled:TO-220 D/C:08+
MFG: ST
Package Cooled: TO-220
D/C: 08+
Description: This N-Channel enhancement mode MOSFET is the latest refinement of STMicroelectronic unique "Single Fe...
This N-Channel enhancement mode MOSFET is the latest refinement of STMicroelectronic unique "Single Feature Size™" strip-based process with less critical aligment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and low gate charge.
| Symbol | Parameter | Value | Unit |
| VDS | Drain-source Voltage (VGS=0) | 40 | V |
| VGS | Gate-Source Voltage | ± 20 | V |
| ID Note 1 | Drain Current (continuous) at TC = 25°C | 80 | A |
| ID | Drain Current (continuous) at TC = 100°C | 65 | A |
| IDM Note 2 | Drain Current (pulsed) | 320 | A |
| PTOT | Total Dissipation at TC = 25°C | 110 | W |
| Derating Factor | 0.73 | W/°C | |
| dv/dt Note 3 | Peak Diode Recovery voltage slo | 8 | V/ns |
| EAS Note 4 | Single Pulse Avalanche Energy | 400 | mJ |
| Tj Tstg |
Operating Junction Temperature Storage Temperature |
-55 to 175 | °C |
STP95N04
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