MFG:ST Package Cooled:TO-220F D/C:08+
MFG: ST
Package Cooled: TO-220F
D/C: 08+
Description: This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell ...
This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.
|
Symbol |
Parameter |
Value |
Unit |
|
VDS |
Drain-sourceVoltage(VGS =0) |
500 |
V |
|
VDGR |
Drain-gateVoltage(RGS =20k) |
500 |
V |
|
VGS |
Gate-sourceVoltage |
±30 |
V |
|
ID |
DrainCurrent(continuous)atTc =25 |
5 |
A |
|
ID |
Drain Current(continuous)atTc =100 |
3.1 |
A |
|
IDM(`) |
Drain Current(pulsed) |
35 |
A |
|
Ptot |
Total DissipationatT =25 |
45 |
W |
| Derating Factor |
0.36 |
W/ | |
|
VISO |
InsulationWithstandVoltage(DC) |
2000 |
V |
|
Tstg |
Storage Temperature |
-65 to1 50 |
|
|
Tj |
Max.Operating Junction Temperature |
150 |
|
TYPE |
VDSS |
RDS(on) |
ID |
| STP9NA50FI |
500 V |
< 0.8 |
5 A |
STP9NA50FI
PDF/DataSheet Download
This series of POWER MOSFETS STP9NA50 represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior sw...
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