STP9NB50FP Selling Leads, Price trend, STP9NB50FP DataSheet download, circuit diagram from SeekIC.com

Features: TYPE VDSS RDS(on) ID STP9NB50FP 500 V < 0.85 4.9A` TYPICAL RDS(on) = 0.75 ` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTED` VERY LOW INTRINSIC CAPACITANCES` GATE CHARGE MINIMIZEDApplication·HIGH CURRENT, HIGH SPEED SWITCHING·SWITH MODE POWER SUPPL...

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STP9NB50FP: Features: TYPE VDSS RDS(on) ID STP9NB50FP 500 V < 0.85 4.9A` TYPICAL RDS(on) = 0.75 ` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTED` VERY LOW INTRINSIC CAPA...

STP9NB50FP Data Sheet

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Part Number:: STP9NB50FP
Supply Ability:: 5000

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Upload time: 2025/12/24

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Product Details

Description

Features:

TYPE	V_DSS	R_DS(on)	I_D
STP9NB50FP	500 V	< 0.85	4.9 A

` TYPICAL R_DS(on) = 0.75
` EXTREMELY HIGH dv/dt CAPABILITY
` 100% AVALANCHE TESTED
` VERY LOW INTRINSIC CAPACITANCES
` GATE CHARGE MINIMIZED

Application

·HIGH CURRENT, HIGH SPEED SWITCHING
·SWITH MODE POWER SUPPLIES (SMPS)
·DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE

Specifications

Symbol	Parameter	Value	Units
V_DS	Drain-source Voltage (V_GS = 0)	500	V
V_DGR	Drain- gate Voltage (R_GS = 20 k)	500	V
V_GS	Gate-source Voltage	±30	V
I_D	Drain Current (continuous) at Tc = 25	4.9	A
I_D	Drain Current (continuous) at Tc = 100	3.1	A
I_DM(•)	Drain Current (pulsed)	34.4	A
P_tot	Total Dissipation at Tc = 25	40	W
	Derating Factor	0.32	W/
dv/dt (1)	Peak Diode Recovery voltage slope	4.5	V/ns
V_ISO	Insulat ion Withstand Voltage (DC)	2000
T_stg	Storage Temperature	-65 to +150
T_j	Max. Operating Junction Temperature	150

(•)Pulse width limited by safe operating area

(1)I_SD<9A, di/dt<200A/, V_DD<V_(BR)DSS,TJ<T_JMAX

Description

Using the latest high voltage MESH OVERLAY] process, STMicroelectronics has designed an advanced family of power MOSFETs STP9NB50FP with outstanding performances. The new patent pending strip layout coupled with the Company's proprieraty edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

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