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Part Number: STP9NK60Z

 

 

 

 

Description: The SuperMESH™ series is obtained through anextreme optimization of ST's well established strip-based Po...


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STP9NK60Z General Description


The SuperMESH™ series is obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is tak-en to ensure a very good dv/dt capability for the most demanding applications. Such series comple-ments ST full range of high voltage MOSFETs in-cluding revolutionary MDmesh™ products.

STP9NK60Z Maximum Ratings

Symbol
Parameter
Value
Unit
TO-220 /
D2PAK / I2PAK
TO-220FP
VDS
Drain-source Voltage (VGS = 0)
600
V
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
600
V
VGS
Gate- source Voltage
± 30
V
ID
Drain Current (continuous)at TC =25
7
7(*)
A
ID
Drain Current (continuous)at TC =100
4.4
4.4(*)
A
IDM ()
Drain Current (pulsed)
28
28(*) 
A
PTOT
Total Dissipation at TC = 25
125
30
W
Derating Factor
1
0.24
W/
VESD(G-S)
Gate source ESD(HBM-C=100pF, R=1.5KΩ)
4000
V
dv/dt (1)
Peak Diode Recovery voltage slope
4.5
V /ns
VISO
Insulation Withstand Voltage (DC)
-
2500
V
Tj
Tstg
Operating Junction Temperature
Storage Temperature
55 to 150
55 to 150

STP9NK60Z Features

YPICAL RDS(on) = 0.85 Ω
 XTREMELY HIGH dv/dt CAPABILITY
MPROVED ESD CAPABILITY
00% AVALANCHE RATED
ATE CHARGE MINIMIZED
ERY LOW INTRINSIC CAPACITANCES
ERY GOOD MANUFACTURING
    PEATIBILITY

STP9NK60Z Typical Application

HIGH CURRENT, HIGH SPEED SWITCHING
IDEAL FOR OFF-LINE POWER SUPPLIES,
   APTORS AND PFC

STP9NK60Z datasheet

STP9NK60Z
PDF/DataSheet Download

  • Datasheet: STP9NK60Z
  • File Size: 438654 KB
  • Manufacturer: STMICROELECTRONICS [STMicroelectronics]
  • Click here to Download

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