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Part Number: STP9NK60ZFD

 

 

 

 

Description: The Fast SuperMESH™ series associates all advantages of reduced on-resistance, zener gate protec...


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STP9NK60ZFD General Description


The Fast SuperMESH™ series associates all advantages of reduced on-resistance, zener gate protection and very goog dv/dt capability with a Fast body-drain recovery diode. Such series complements the "FDmesh™" Advanced Technology.

STP9NK60ZFD Maximum Ratings

Symbol
Parameter
Value
Unit
TO-220 / D2PAK
TO-220FP
VDS
Drain-source Voltage (VGS = 0)
600
V
VDGR
Drain-gate Voltage (RGS = 20 k)
600
V
VGS
Gate- source Voltage
± 30
V
ID
Drain Current (continuos) at TC = 25
7
7(*)
A
ID
Drain Current (continuos) at TC = 100
4.3
4.3(*)
A
IDM (`)
Drain Current (pulsed)
28
28(*)
A
Ptot
Total Dissipation at TC = 25
104
32
W
Derating Factor
0.83
0.26
W/
VESD(G-S)
Gate source ESD (HBM-C=100pF, R=1.5KW)
4000
V
dv/dt (1)
Peak Diode Recovery voltage slope
TBD
V/ns
VISO
Insulation Withstand Voltage (DC)
-
2500
V
Tj
Tstg
Operating Junction Temperature
Storage Temperature
-55 to 150

(`) Pulse width limited by safe operating area.

(1) ISD 7A, di/dt200A/µs, VDD V(BR)DSS, Tj TJMAX.
(*) Limited only by maximum temperature allowed

STP9NK60ZFD Features

` TYPICAL RDS(on) = 0.85
` HIGH dv/dt CAPABILITY
` 100% AVALANCHE TESTED
` GATE CHARGE MINIMIZED
` LOW INTRINSIC CAPACITANCES
` VERY GOOD MANUFACTURING REPEATIBILITY
` FAST INTERNAL RECOVERY DIODE

STP9NK60ZFD Typical Application

· HID BALLAST
· ZVS PHASE-SHIFT FULL BRIDGE CONVERTERS

STP9NK60ZFD datasheet

STP9NK60ZFD
PDF/DataSheet Download

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