Features: ` TYPICAL RDS(on) = 0.85 ` HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTED` GATE CHARGE MINIMIZED` LOW INTRINSIC CAPACITANCES` VERY GOOD MANUFACTURING REPEATIBILITY` FAST INTERNAL RECOVERY DIODEApplication· HID BALLAST· ZVS PHASE-SHIFT FULL BRIDGE CONVERTERSSpecifications Symbol P...
STP9NK60ZFDFP: Features: ` TYPICAL RDS(on) = 0.85 ` HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTED` GATE CHARGE MINIMIZED` LOW INTRINSIC CAPACITANCES` VERY GOOD MANUFACTURING REPEATIBILITY` FAST INTERNAL RECOVERY DI...
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|
Symbol |
Parameter |
Value |
Unit | |
|
TO-220 / D2PAK |
TO-220FP | |||
|
VDS |
Drain-source Voltage (VGS = 0) |
600 |
V | |
|
VDGR |
Drain-gate Voltage (RGS = 20 k) |
600 |
V | |
|
VGS |
Gate- source Voltage |
± 30 |
V | |
|
ID |
Drain Current (continuos) at TC = 25 |
7 |
7(*) |
A |
|
ID |
Drain Current (continuos) at TC = 100 |
4.3 |
4.3(*) |
A |
|
IDM (`) |
Drain Current (pulsed) |
28 |
28(*) |
A |
|
Ptot |
Total Dissipation at TC = 25 |
104 |
32 |
W |
| Derating Factor |
0.83 |
0.26 |
W/ | |
|
VESD(G-S) |
Gate source ESD (HBM-C=100pF, R=1.5KW) |
4000 |
V | |
|
dv/dt (1) |
Peak Diode Recovery voltage slope |
TBD |
V/ns | |
|
VISO |
Insulation Withstand Voltage (DC) |
- |
2500 |
V |
|
Tj Tstg |
Operating Junction Temperature Storage Temperature |
-55 to 150 |
||
The Fast Super STP9NK60ZFDFP MESH™ series associates all advantages of reduced on-resistance, zener gate protection and very goog dv/dt capability with a Fast body-drain recovery diode. Such series complements the "FDmesh™" Advanced Technology.