MOSFET N-Ch 650 Volt 6.4Amp Zener SuperMESH
STP9NK65Z: MOSFET N-Ch 650 Volt 6.4Amp Zener SuperMESH
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 650 V | ||
| Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 7 A | ||
| Resistance Drain-Source RDS (on) : | 1.2 Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
| Package / Case : | TO-220 | Packaging : | Tube |
The STP9NK65Z is obtained through an extreme optimization of ST's well estabilished stripbased powerMESH layout. The features of STP9NK65 Z are as follows: (1)typical RDS(on)=1.5 ; (2)extremely high dv/dt capability; (3)100% avlanche tested; (4)gate change minimized; (5)very low intrinsic capacitances; (6)very good manufacturing repeatibility.
The following is about the absolute maximum ratings of STP9NK65Z: (1)drain-source voltage(VGS=0): 650V; (2)drain-gate voltage(VGS=20 k): 650V; (3)gate-source voltage: ±30V; (4)drain current at TC=25: 5 A; (5)drain current at TC=100: 3.1 A; (6)drain current (pulse): 20 A; (7)total dissipation at TC=25: 85 W; (8)derating factor: 0.6 W/; (9)gate source ESD: 2000V; (10)peak diode recovery voltage slope: 4.5 V/ns.
The electrical characteristics of the STP9NK65Z are: (1)drain-source breakdown voltage: 650V min at ID=1mA, VGS=0; (2)zero gate voltage drain source (VGS=0): 1 A max at VDS=max rating and 50 A at VDS=max rating, TC=125; (3)gate-body leakage current (VDS=0): ±10 A at VGS=±20V; (4)gate threshold voltage: 3V min, 3.75V typ and 4.5V max at VGS=VDS, ID=50 A; (5)static drain-source on resistance: 1.5 typ and 1.8 max at VGS=10 V, ID=2.1 A.
| Technical/Catalog Information | STP9NK65Z |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25° C | 6.4A |
| Rds On (Max) @ Id, Vgs | 1.2 Ohm @ 3.2A, 10V |
| Input Capacitance (Ciss) @ Vds | 1145pF @ 25V |
| Power - Max | 125W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 41nC @ 10V |
| Package / Case | TO-220-3 (Straight Leads) |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STP9NK65Z STP9NK65Z |