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Part Number: STP9NM60

 

 

 

 

Description: The MDmesh™ is a new revolutionary MOSFET technology that associates the Mult...


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STP9NM60 General Description


The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar completition's products.

STP9NM60 Maximum Ratings

Symbol
Parameter
Value
Unit
VDS
 Drain-source Voltage (VGS = 0)
600
V
VDGR
 Drain-gate Voltage (RGS = 20 k)
600
V
VGS
 Gate- source Voltage
±30
V
ID
 Drain Current (continuos) at TC = 25
8.3
A
ID
 Drain Current (continuos) at TC = 100
5.2
A
IDM (`)
 Drain Current (pulsed)
33.2
A
Ptot
 Total Dissipation at TC = 25
100
W
 Derating Factor
0.8
W/
dv/dt (1)
 Peak Diode Recovery voltage slope
15
V/ns
Tj
Tstg
 Operating Junction Temperature
Storage Temperature
-65 to 150

(`) Pulse width limited by safe operating area.

(1) ISD 7A, di/dt 400 µA, VDD V(BR)DSS, Tj TJMAX.

STP9NM60 Features

` TYPICAL RDS(on) = 0.55
` HIGH dv/dt AND AVALANCHE CAPABILITIES
` IMPROVED ESD CAPABILITY
` LOW INPUT CAPACITANCE AND GATE CHARGE
` LOW GATE INPUT RESISTANCE
` TIGHT PROCESS CONTROL AND HIGH MANUFACTORING YIELDS

STP9NM60 Typical Application

The MDmesh™ family is very suitable for increase the power density of high voltage converters allowing system miniaturization and higher efficiencies.

STP9NM60 datasheet

STP9NM60
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