Purchase STQ1NC60, In-stock STQ1NC60 From SeekIC.
Part Number: STQ1NC60
Description: Using the latest high voltage MESH OVERLAY]II process, STMicroelectronics has designed an advanced fam...
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STQ1NC60
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DataSheet
General Description
STQ1NC60 General Description
Using the latest high voltage MESH OVERLAY]II process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
STQ1NC60 Maximum Ratings
|
Symbol |
Item |
Value |
Unit |
|
VDS |
Drain-source Voltage (VGS = 0) |
600 |
V |
|
VDGR |
Drain-gate Voltage (RGS = 20 k) |
600 |
V |
|
VGS |
Gate- source Voltage |
±30 |
V |
|
Id |
Drain Current (continuos) at TC = 25°C |
0.38 |
A |
|
Id |
Drain Current (continuos) at TC = 100°C |
0.24 |
A |
|
IDM(1) |
Drain Current (pulsed) |
1.52 |
A |
|
PTOT |
Total Dissipation at TC = 25°C |
3.1 |
W |
| Derating Factor |
0.028 |
W/ | |
|
dv/dt(1) |
Peak Diode Recovery voltage slope |
3 |
V/ns |
|
TJ TSTG |
Operating Junction Temperature Storage Temperature |
-55 to 150 |
|
STQ1NC60 Features
` TYPICAL RDS(on) = 12 W
` EXTREMELY HIGH dv/dt CAPABILITY
` 100% AVALANCHE TESTED
` NEW HIGH VOLTAGE BENCHMARK
` GATE CHARGE MINIMIZED
`ADD SUFFIX "-AP" FOR ORDERING IN AMMOPAK
` EXTREMELY HIGH dv/dt CAPABILITY
` 100% AVALANCHE TESTED
` NEW HIGH VOLTAGE BENCHMARK
` GATE CHARGE MINIMIZED
`ADD SUFFIX "-AP" FOR ORDERING IN AMMOPAK
STQ1NC60 Typical Application
· SWITCH MODE LOW POWER SUPPIES (SMPS)
· BATTERY CHARGER
· BATTERY CHARGER
STQ1NC60
PDF/DataSheet Download
- Datasheet: STQ1NC60
- File Size: 109231 KB
- Manufacturer:
- Click here to Download
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