STQ1NK60ZR

Features: ` TYPICAL RDS(on) = 13` EXTREMELY HIGH dv/dt CAPABILITY` ESD IMPROVED CAPABILITY` 100% AVALANCHE TESTED` NEW HIGH VOLTAGE BENCHMARK` GATE CHARGE MINIMIZEDApplication· AC ADAPTORS AND BATTERY CHARGERS· SWITH MODE POWER SUPPLIES (SMPS)Specifications Symbol Parameter Value Unit ...

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SeekIC No. : 004508667 Detail

STQ1NK60ZR: Features: ` TYPICAL RDS(on) = 13` EXTREMELY HIGH dv/dt CAPABILITY` ESD IMPROVED CAPABILITY` 100% AVALANCHE TESTED` NEW HIGH VOLTAGE BENCHMARK` GATE CHARGE MINIMIZEDApplication· AC ADAPTORS AND BATTE...

floor Price/Ceiling Price

Part Number:
STQ1NK60ZR
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/9

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Product Details

Description



Features:

` TYPICAL RDS(on) = 13
` EXTREMELY HIGH dv/dt CAPABILITY
` ESD IMPROVED CAPABILITY
` 100% AVALANCHE TESTED
` NEW HIGH VOLTAGE BENCHMARK
` GATE CHARGE MINIMIZED



Application

· AC ADAPTORS AND BATTERY CHARGERS
· SWITH MODE POWER SUPPLIES (SMPS)



Specifications

Symbol Parameter
Value
Unit
IPAK
TO-92
SOT-223
VDS Collector-Source Voltage (VGS = 0 V)
600
V
VDGR Drain-gate Voltage (RGS = 20 k)

600

V
VGS Gate-Source Voltage
±30
V
ID Drain Current (continuous) at TC = 25

0.8

0.3

0.3

A
ID Drain Current (continuous) at TC = 100

0.5

0.189

0.189

A
IDM(`) Drain Current (pulsed)

3.2

1.2

1.2

A
PTOT Total Dissipation at TC = 25

25

3

3.3

W
  Derating Factor

0.24

0.025

0.026

W/
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5K)
800
V
dv/dt(1) Peak Diode Recovery voltage slope
4.5
V/ns
Tj
Tstg
Operating Junction Temperature
Storage Temperature
-55 to 150
(•) Pulse width limited by safe operating area.
(1) ISD 0.3A, di/dt 200A/s, VDD V(BR)DSS, Tj TJMAX


Description

The SuperMESH™ series STQ1NK60ZR is obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.




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