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D/C:2004  

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Part Number: STQ1NK60ZR

 

 

 

D/C: 2004

Description: The SuperMESH™ series is obtained through an extreme optimization of ST's wel...


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STQ1NK60ZR General Description


The SuperMESH™ series is obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.

STQ1NK60ZR Maximum Ratings

Symbol Parameter
Value
Unit
IPAK
TO-92
SOT-223
VDS Collector-Source Voltage (VGS = 0 V)
600
V
VDGR Drain-gate Voltage (RGS = 20 k)

600

V
VGS Gate-Source Voltage
±30
V
ID Drain Current (continuous) at TC = 25

0.8

0.3

0.3

A
ID Drain Current (continuous) at TC = 100

0.5

0.189

0.189

A
IDM(`) Drain Current (pulsed)

3.2

1.2

1.2

A
PTOT Total Dissipation at TC = 25

25

3

3.3

W
  Derating Factor

0.24

0.025

0.026

W/
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5K)
800
V
dv/dt(1) Peak Diode Recovery voltage slope
4.5
V/ns
Tj
Tstg
Operating Junction Temperature
Storage Temperature
-55 to 150
(•) Pulse width limited by safe operating area.
(1) ISD 0.3A, di/dt 200A/s, VDD V(BR)DSS, Tj TJMAX

STQ1NK60ZR Features

` TYPICAL RDS(on) = 13
` EXTREMELY HIGH dv/dt CAPABILITY
` ESD IMPROVED CAPABILITY
` 100% AVALANCHE TESTED
` NEW HIGH VOLTAGE BENCHMARK
` GATE CHARGE MINIMIZED

STQ1NK60ZR Typical Application

· AC ADAPTORS AND BATTERY CHARGERS
· SWITH MODE POWER SUPPLIES (SMPS)

STQ1NK60ZR datasheet

STQ1NK60ZR
PDF/DataSheet Download

  • Datasheet: STQ1NK60ZR
  • File Size: 673069 KB
  • Manufacturer: STMICROELECTRONICS [STMicroelectronics]
  • Click here to Download

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