Features: ` TYPICAL RDS(on) = 13` EXTREMELY HIGH dv/dt CAPABILITY` ESD IMPROVED CAPABILITY` 100% AVALANCHE TESTED` NEW HIGH VOLTAGE BENCHMARK` GATE CHARGE MINIMIZEDApplication· AC ADAPTORS AND BATTERY CHARGERS· SWITH MODE POWER SUPPLIES (SMPS)Specifications Symbol Parameter Value Unit ...
STQ1NK60ZR: Features: ` TYPICAL RDS(on) = 13` EXTREMELY HIGH dv/dt CAPABILITY` ESD IMPROVED CAPABILITY` 100% AVALANCHE TESTED` NEW HIGH VOLTAGE BENCHMARK` GATE CHARGE MINIMIZEDApplication· AC ADAPTORS AND BATTE...
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Features: ` TYPICAL RDS(on) = 8 ` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTED` GATE CHA...
Symbol | Parameter |
Value |
Unit | ||
IPAK |
TO-92 |
SOT-223 | |||
VDS | Collector-Source Voltage (VGS = 0 V) |
600 |
V | ||
VDGR | Drain-gate Voltage (RGS = 20 k) |
600 |
V | ||
VGS | Gate-Source Voltage |
±30 |
V | ||
ID | Drain Current (continuous) at TC = 25 |
0.8 |
0.3 |
0.3 |
A |
ID | Drain Current (continuous) at TC = 100 |
0.5 |
0.189 |
0.189 |
A |
IDM(`) | Drain Current (pulsed) |
3.2 |
1.2 |
1.2 |
A |
PTOT | Total Dissipation at TC = 25 |
25 |
3 |
3.3 |
W |
Derating Factor |
0.24 |
0.025 |
0.026 |
W/ | |
VESD(G-S) | Gate source ESD(HBM-C=100pF, R=1.5K) |
800 |
V | ||
dv/dt(1) | Peak Diode Recovery voltage slope |
4.5 |
V/ns | ||
Tj Tstg |
Operating Junction Temperature Storage Temperature |
-55 to 150 |
The SuperMESH™ series STQ1NK60ZR is obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.