STQ1NK80ZR-AP

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 800 V
Package / Case : TO-92
Continuous Drain Current : 0.3 A
Packaging : Ammo
Resistance Drain-Source RDS (on) : 16 Ohms


Features:

`TYPICAL RDS(on) = 13
` EXTREMELY HIGH dv/dt CAPABILITY
` ESD IMPROVED CAPABILITY
`100% AVALANCHE TESTED
` NEW HIGH VOLTAGE BENCHMARK
` GATE CHARGE MINIMIZED


Application

· AC ADAPTORS AND BATTERY CHARGERS
· SWITH MODE POWER SUPPLIES (SMPS)


Specifications

Symbol	Item	Value			Unit
		TO-92	SOT-223	DPAK/IPAK
VDS	Drain-source Voltage (VGS = 0)	800			V
VDGR	Drain-gate Voltage (RGS = 20 k)	800			V
VGS	Gate- source Voltage	±30			V
Id	Drain Current (continuos) at TC = 25°C	0.3	0.25	1.0	A
Id	Drain Current (continuos) at TC = 100°C	0.19	0.16	.163	A
IDM(*)	Drain Current (pulsed)	5			A
PTOT	Total Dissipation at TC = 25°C	3	2.5	45	W
	Derating Factor	0.025	0.02	0.36	W/
PESD(G-S)	Gate source ESD (HBM-C= 100pF, R= 1.5K)	1000			V
dv/dt(1)	Peak Diode Recovery voltage slope	4.5			V/ns
TJ TSTG	Operating Junction Temperature Storage Temperature	-55 to 150

Description

The SuperMESH™ series STQ1NK80ZR-AP is obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.

Parameters:

Technical/Catalog Information	STQ1NK80ZR-AP
Vendor	STMicroelectronics (VA)
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25° C	300mA
Rds On (Max) @ Id, Vgs	16 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	160pF @ 25V
Power - Max	3W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	7.7nC @ 10V
Package / Case	TO-92-3 (Formed Leads)
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STQ1NK80ZR AP STQ1NK80ZRAP 497 6197 6 ND 49761976ND 497-6197-6