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Part Number: STQ1NK80ZR-AP

 

 

 

 

Description: The SuperMESH™ series is obtained through an extreme optimization of ST's well established strip...


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STQ1NK80ZR-AP General Description


The SuperMESH™ series is obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.

STQ1NK80ZR-AP Maximum Ratings

Symbol
Item
Value
Unit
TO-92 SOT-223 DPAK/IPAK
VDS
Drain-source Voltage (VGS = 0)
800
V
VDGR
Drain-gate Voltage (RGS = 20 k)
800
V
VGS
Gate- source Voltage
±30
V
Id
Drain Current (continuos) at TC = 25°C
0.3
0.25
1.0
A
Id
Drain Current (continuos) at TC = 100°C
0.19
0.16
.163
A
IDM(*)
Drain Current (pulsed)
5
A
PTOT
Total Dissipation at TC = 25°C
3
2.5
45
W
  Derating Factor
0.025
0.02
0.36
W/
PESD(G-S)
Gate source ESD (HBM-C= 100pF, R= 1.5K)
1000
V
dv/dt(1)
Peak Diode Recovery voltage slope
4.5
V/ns
TJ
TSTG
Operating Junction Temperature
Storage Temperature
-55 to 150

STQ1NK80ZR-AP Features

`TYPICAL RDS(on) = 13
` EXTREMELY HIGH dv/dt CAPABILITY
` ESD IMPROVED CAPABILITY
`100% AVALANCHE TESTED
` NEW HIGH VOLTAGE BENCHMARK
` GATE CHARGE MINIMIZED

STQ1NK80ZR-AP Typical Application

· AC ADAPTORS AND BATTERY CHARGERS
· SWITH MODE POWER SUPPLIES (SMPS)

STQ1NK80ZR-AP datasheet

STQ1NK80ZR-AP
PDF/DataSheet Download

  • Datasheet: STQ1NK80ZR-AP
  • File Size: 645539 KB
  • Manufacturer: STMICROELECTRONICS [STMicroelectronics]
  • Click here to Download

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