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Part Number: STQ1NK80ZR-AP
Description: The SuperMESH™ series is obtained through an extreme optimization of ST's well established strip...


Description: The SuperMESH™ series is obtained through an extreme optimization of ST's well established strip...
The SuperMESH™ series is obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
|
Symbol |
Item |
Value |
Unit | ||
| TO-92 | SOT-223 | DPAK/IPAK | |||
|
VDS |
Drain-source Voltage (VGS = 0) |
800 |
V | ||
|
VDGR |
Drain-gate Voltage (RGS = 20 k) |
800 |
V | ||
|
VGS |
Gate- source Voltage |
±30 |
V | ||
|
Id |
Drain Current (continuos) at TC = 25°C |
0.3 |
0.25 |
1.0 |
A |
|
Id |
Drain Current (continuos) at TC = 100°C |
0.19 |
0.16 |
.163 |
A |
|
IDM(*) |
Drain Current (pulsed) |
5 |
A | ||
|
PTOT |
Total Dissipation at TC = 25°C |
3 |
2.5 |
45 |
W |
| Derating Factor |
0.025 |
0.02 |
0.36 |
W/ | |
|
PESD(G-S) |
Gate source ESD (HBM-C= 100pF, R= 1.5K) |
1000 |
V | ||
|
dv/dt(1) |
Peak Diode Recovery voltage slope |
4.5 |
V/ns | ||
|
TJ TSTG |
Operating Junction Temperature Storage Temperature |
-55 to 150 |
| ||
STQ1NK80ZR-AP
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