FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: 500mA
Gate Charge (Qg) @ Vgs: 15nC @ 10V
Power - Max: 3W
Drain to Source Voltage (Vdss): 600V
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Input Capacitance (Ciss) @ Vds: 280pF @ 25V
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Packaging: Tape & Box (TB)
Series: SuperMESH™
Manufacturer: STMicroelectronics
Supplier Device Package: TO-92
Rds On (Max) @ Id, Vgs: 4.8 Ohm @ 1A, 10V
Features: ` TYPICAL RDS(on) = 4.4
` EXTREMELY HIGH dv/dt CAPABILITY
` ESD IMPROVED CAPABILITY
` 100% AVALANCHE TESTED
` NEW HIGH VOLTAGE BENCHMARK
` GATE CHARGE MINIMIZEDApplication· AC ADAPTORS AND BATTERY CHARGERS
· SWITH MODE POWER SUPPLIES (SMPS)Specifications
| Symbol |
Parameter |
Value |
Unit |
|
IPAK |
TO-220FP |
TO-92 |
| VDS |
Collector-Source Voltage (VGS = 0 V) |
600 |
V |
| VDGR |
Drain-gate Voltage (RGS = 20 k) |
600 |
V |
| VGS |
Gate-Source Voltage |
±30 |
V |
| ID |
Drain Current (continuous) at TC = 25 |
2.0 |
2.0(*) |
0.5 |
A |
| ID |
Drain Current (continuous) at TC = 100 |
1.26 |
1.26(*) |
0.32 |
A |
| IDM(`) |
Drain Current (pulsed) |
8 |
8(*) |
2 |
A |
| PTOT |
Total Dissipation at TC = 25 |
45 |
20 |
3 |
W |
| |
Derating Factor |
0.36 |
0.16 |
0.025 |
W/ |
| VESD(G-S) |
Gate source ESD(HBM-C=100pF, R=1.5K) |
2000 |
V |
| dv/dt(1) |
Peak Diode Recovery voltage slope |
4.5 |
V/ns |
| VISO |
Insulation Withstand Voltage (DC) |
- |
2500 |
1 |
V |
Tj
Tstg |
Operating Junction Temperature
Storage Temperature |
-55 to 150
|
|
(•) Pulse width limited by safe operating area.
(1) I
SD 2A, di/dt 200A/s, V
DD V
(BR)DSS, T
j T
JMAX(*) Current Limited by packageDescriptionThe SuperMESH™ series STQ2HNK60ZR-AP is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
STQ2HNK60ZR-AP Data Sheet
