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Part Number: STQ2HNK60ZR-AP

 

 

 

 

Description: The SuperMESH™ series is obtained through an extreme optimization of ST's well established strip...


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STQ2HNK60ZR-AP General Description


The SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.

STQ2HNK60ZR-AP Maximum Ratings

Symbol Parameter
Value
Unit
IPAK
TO-220FP
TO-92
VDS Collector-Source Voltage (VGS = 0 V)
600
V
VDGR Drain-gate Voltage (RGS = 20 k)

600
V
VGS Gate-Source Voltage
±30
V
ID Drain Current (continuous) at TC = 25
2.0
2.0(*)
0.5
A
ID Drain Current (continuous) at TC = 100
1.26

1.26(*)
0.32
A
IDM(`) Drain Current (pulsed)
8
8(*)
2
A
PTOT Total Dissipation at TC = 25
45
20
3
W
  Derating Factor
0.36
0.16
0.025
W/
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5K)
2000
V
dv/dt(1) Peak Diode Recovery voltage slope
4.5
V/ns
VISO Insulation Withstand Voltage (DC)
-
2500
1
V
Tj
Tstg		 Operating Junction Temperature
Storage Temperature
-55 to 150

(•) Pulse width limited by safe operating area.
(1) ISD 2A, di/dt 200A/s, VDD V(BR)DSS, Tj TJMAX
(*) Current Limited by package

STQ2HNK60ZR-AP Features

` TYPICAL RDS(on) = 4.4
` EXTREMELY HIGH dv/dt CAPABILITY
` ESD IMPROVED CAPABILITY
` 100% AVALANCHE TESTED
` NEW HIGH VOLTAGE BENCHMARK
` GATE CHARGE MINIMIZED

STQ2HNK60ZR-AP Typical Application

· AC ADAPTORS AND BATTERY CHARGERS
· SWITH MODE POWER SUPPLIES (SMPS)

STQ2HNK60ZR-AP datasheet

STQ2HNK60ZR-AP
PDF/DataSheet Download

  • Datasheet: STQ2HNK60ZR-AP
  • File Size: 415518 KB
  • Manufacturer: STMICROELECTRONICS [STMicroelectronics]
  • Click here to Download

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