FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Gate Charge (Qg) @ Vgs: 10nC @ 10V
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: 400mA
Power - Max: 3W
Input Capacitance (Ciss) @ Vds: 170pF @ 25V
Drain to Source Voltage (Vdss): 600V
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package: TO-92-3
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Packaging: Tape & Box (TB)
Series: SuperMESH™
Manufacturer: STMicroelectronics
Rds On (Max) @ Id, Vgs: 8 Ohm @ 700mA, 10V
Features: ` TYPICAL RDS(on) = 7.2
` EXTREMELY HIGH dv/dt CAPABILITY
` ESD IMPROVED CAPABILITY
` 100% AVALANCHE TESTED
` NEW HIGH VOLTAGE BENCHMARK
` GATE CHARGE MINIMIZEDApplication· LOW POWER BATTERY CHARGERS
· SWITH MODE LOW POWER SUPPLIES(SMPS)
· LOW POWER, BALLAST, CFL (COMPACT FLUORESCENT LAMPS)Specifications
| Symbol |
Parameter |
Value |
Unit |
|
TO-220 /
IPAK |
TO-92 |
TO-220FP |
| VDS |
Collector-Source Voltage (VGS = 0 V) |
800 |
V |
| VDGR |
Drain-gate Voltage (RGS = 20 k) |
800 |
V |
| VGS |
Gate-Source Voltage |
±30 |
V |
| ID |
Drain Current (continuous) at TC = 25 |
1.4 |
0.4 |
1.4 |
A |
| ID |
Drain Current (continuous) at TC = 100 |
0.77 |
0.25 |
0.77 |
A |
| IDM(`) |
Drain Current (pulsed) |
5.6 |
1.6 |
5.6 |
A |
| PTOT |
Total Dissipation at TC = 25 |
45 |
3 |
20 |
W |
| |
Derating Factor |
0.36 |
0.025 |
0.16 |
W/ |
| VESD(G-S) |
Gate source ESD(HBM-C=100pF, R=1.5K) |
1500 |
KV |
| dv/dt(1) |
Peak Diode Recovery voltage slope |
4.5 |
V/ns |
| VISO |
Insulation Withstand Voltage (DC) |
- |
- |
2500 |
V |
Tj
Tstg |
Operating Junction Temperature
Storage Temperature |
-55 to 150
|
|
(`) Pulse width limited by safe operating area
(1) ISD 1.4A, di/dt 200A/s, VDD V(BR)DSS, Tj TJMAX.
(*) Limited only by maximum temperature allowedDescriptionThe SuperMESH™ series STQ2NK60ZR-AP is obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
STQ2NK60ZR-AP Data Sheet
