ApplicationDC MOTOR CONTROL (DISK DRIVES, etc.) DC-DC & DC-AC CONVERTERSSYNCHRONOUS RECTIFICATIONSpecifications Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 60 V VDGR Drain- gate Voltage (RGS = 20 k) 60 V VGS Gate-Source Vol...
STQ2NF06L: ApplicationDC MOTOR CONTROL (DISK DRIVES, etc.) DC-DC & DC-AC CONVERTERSSYNCHRONOUS RECTIFICATIONSpecifications Symbol Parameter Value Unit VDS Drain-source Voltage (VGS ...
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Symbol |
Parameter |
Value |
Unit |
VDS |
Drain-source Voltage (VGS = 0) |
60 |
V |
VDGR |
Drain- gate Voltage (RGS = 20 k) |
60 |
V |
VGS |
Gate-Source Voltage |
± 16 |
V |
ID |
Drain Current (continuous) at Tc = 25 |
2 |
A |
ID |
Drain Current (continuous) at Tc = 100 |
1.2 |
A |
IDM(`) |
Drain Current (pulsed) |
8 |
A |
PTOT(1) |
Total Dissipation at Tc = 25 |
3 |
W |
Derating Factor |
8 |
W/
| |
dv/dt (1) |
Peak Diode Recovery voltage slope |
6 |
V/ns |
EAS (3) | Single Pulse Avalanche Energy | 200 | mJ |
Tstg |
Storage Temperature |
-55 to 150 |
|
Tj |
Max. Operating Junction Temperature |
|
This Power MOSFET STQ2NF06L is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.