Application·DC MOTOR DRIVE·DC-DC CONVERTERS·BATTERY MANAGMENT IN NOMADIC EQUIPMENT·POWER MANAGEMENT IN PORTABLE/DESKTOP PCsPinoutSpecifications Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 60 V VDGR Drain- gate Voltage (RGS = 20 k) 60 V...
STS2DNE60: Application·DC MOTOR DRIVE·DC-DC CONVERTERS·BATTERY MANAGMENT IN NOMADIC EQUIPMENT·POWER MANAGEMENT IN PORTABLE/DESKTOP PCsPinoutSpecifications Symbol Parameter Value Unit VDS ...
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Features: · Optimal RDS(on) x Qg trade-off @ 4.5V· Reduced switching losses· Reduced conduction lo...
·DC MOTOR DRIVE
·DC-DC CONVERTERS
·BATTERY MANAGMENT IN NOMADIC EQUIPMENT
·POWER MANAGEMENT IN PORTABLE/DESKTOP PCs

|
Symbol |
Parameter |
Value |
Unit |
|
VDS |
Drain-source Voltage (VGS = 0) |
60 |
V |
|
VDGR |
Drain- gate Voltage (RGS = 20 k) |
60 |
V |
|
VGS |
Gate-Source Voltage |
± 20 |
V |
|
ID |
Drain Current (continuous) at Tc = 25 Single Operation |
2 |
A |
|
ID |
Drain Current (continuous) at Tc = 100 Single Operation |
1.3 |
A |
|
IDM(`) |
Drain Current (pulsed) |
8 |
A |
|
PTOT |
Total Dissipation at TC = 25°CDual Operation Total Dissipation at TC = 25°CSingle Operation |
2.0 1.6 |
W |
This Power MOSFET STS2DNE60 is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transisto shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.