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STS2DPF20V

Application·BATTERY MANAGMENT IN NOMADIC EQUIPMENT·POWER MANAGMENT IN CELLULAR PHONESPinoutSpecifications Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 20 V VDGR Drain- gate Voltage (RGS = 20 k) 20 V VGS Gate-Source Voltage ± ...

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SeekIC No. : 004508767 Detail

STS2DPF20V: Application·BATTERY MANAGMENT IN NOMADIC EQUIPMENT·POWER MANAGMENT IN CELLULAR PHONESPinoutSpecifications Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 20...

STS2DPF20V Data Sheet

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Part Number:
STS2DPF20V
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/24

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Product Details

Description



Application

·BATTERY MANAGMENT IN NOMADIC EQUIPMENT
·POWER MANAGMENT IN CELLULAR PHONES


Pinout

Connection Diagram


Specifications

Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
20
V
VDGR
Drain- gate Voltage (RGS = 20 k)
20
V
VGS
Gate-Source Voltage
± 12
V
ID
Drain Current (continuous) at Tc = 25 Single Operation
2
A
ID

Drain Current (continuous) at Tc = 100 Single Operation
1.26
A
IDM(`)
Drain Current (pulsed)
8
A
PTOT
Total Dissipation at TC = 25°CDual Operation
Total Dissipation at TC = 25°CSingle Operation
1.6
2

W
W

(`) Pulse width limited by safe operating area.


Description

This Power MOSFET STS2DPF20V  is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transisto shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




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