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STS2NF100

Application·HIGH-EFFICIENCY DC-DC CONVERTERS·UPS AND MOTOR CONTROLPinoutSpecifications Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 100 V VDGR Drain- gate Voltage (RGS = 20 kΏ) 100 V VGS Gate-Source Voltage ±20 V ...

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SeekIC No. : 004508768 Detail

STS2NF100: Application·HIGH-EFFICIENCY DC-DC CONVERTERS·UPS AND MOTOR CONTROLPinoutSpecifications Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 100 V VDGR ...

STS2NF100 Data Sheet

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Part Number:
STS2NF100
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/24

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Product Details

Description



Application

·HIGH-EFFICIENCY DC-DC CONVERTERS
·UPS AND MOTOR CONTROL


Pinout

Connection Diagram


Specifications

Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
100
V
VDGR
Drain- gate Voltage (RGS = 20 kΏ)
100
V
VGS
Gate-Source Voltage
±20
V
ID(`)
Drain Current (continuous) at Tc = 25
2
A
ID

Drain Current (continuous) at Tc = 100
1.3
A
IDM(``)
Drain Current (pulsed)
8
A
PTOT
Total Dissipation at Tc = 25
2.5
W
Derating Factor
0.016
W/
dv/dt(1)
Peak Diode Recovery voltage slope
40
V/ns
EAS (2)
Single Pulse Avalanche Energy
200
mJ
Tstg
Storage Temperature
-65 to 150
Tj
Max. Operating Junction Temperature
(``)Pulse width limited by safe operating area        (1)ISD 2A, di/dt 300A/µs, VDD V(BR)DSS, Tj TJMAX.
(`)Limited only by maximum temperature allowed    (2) Starting Tj = 25, ID = 3A, VDD = 50V


Description

This MOSFET series STS2NF100 realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.




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