STS3C2F100

Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Package / Case : SO-8
Packaging : Reel
Drain-Source Breakdown Voltage : 100 V
Maximum Operating Temperature : + 150 C
Transistor Polarity : N and P-Channel
Configuration : Dual Dual Drain
Resistance Drain-Source RDS (on) : 0.145 Ohms
Continuous Drain Current : 3 A, - 1.5 A


Application

DC MOTOR DRIVES
AUDIO AMPLIFIER


Pinout




Specifications

Symbol	Parameter	N-CHANNEL	P-CHANNEL	Unit
VDS	Drain-source Voltage (VGS = 0)	100		V
VDGR	Drain- gate Voltage (RGS = 20 kΏ)	100		V
VGS	Gate-Source Voltage	±20		V
ID	Drain Current (continuous) at Tc = 25	3.0	1.5	A
ID	Drain Current (continuous) at Tc = 100	1.9	1.0	A
IDM(•)	Drain Current (pulsed)	12	6	A
PTOT	Total Dissipation at TC = 25°C	2		W
Tstg	Storage Temperature	-65 to 150
Tj	Max. Operating Junction Temperature	150

(•)Pulse width limited by safe operating area .



Description

This MOSFET STS3C2F100 is the second generation of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.