STS3DNE60L

MOSFET N-CH 60V 3A 8-SOIC

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SeekIC No. : 003430023 Detail

STS3DNE60L: MOSFET N-CH 60V 3A 8-SOIC

floor Price/Ceiling Price

US $ .33~.33 / Piece | Get Latest Price
Part Number:
STS3DNE60L
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~2500
  • Unit Price
  • $.33
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/12/24

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Product Details

Quick Details

Series: - Manufacturer: STMicroelectronics
FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V Drain Source Voltage VDS : + / - 20 V
Current - Continuous Drain (Id) @ 25° C: 3A Rds On (Max) @ Id, Vgs: 80 mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) @ Vgs: 13.5nC @ 4.5V
Input Capacitance (Ciss) @ Vds: 815pF @ 25V Power - Max: 2W
Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO    

Description

FET Feature: Logic Level Gate
Mounting Type: Surface Mount
Series: -
FET Type: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 60V
Vgs(th) (Max) @ Id: 1V @ 250µA
Power - Max: 2W
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Current - Continuous Drain (Id) @ 25° C: 3A
Supplier Device Package: 8-SO
Packaging: Tape & Reel (TR)
Manufacturer: STMicroelectronics
Rds On (Max) @ Id, Vgs: 80 mOhm @ 1.5A, 10V
Gate Charge (Qg) @ Vgs: 13.5nC @ 4.5V
Input Capacitance (Ciss) @ Vds: 815pF @ 25V


Application

·DC MOTOR DRIVE
·DC-DC CONVERTERS
·BATTERY MANAGMENT IN NOMADIC EQUIPMENT
·POWER MANAGEMENT IN PORTABLE/DESKTOP PCs



Pinout

  Connection Diagram


Specifications

Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
60
V
VDGR
Drain- gate Voltage (RGS = 20 k)
60
V
VGS
Gate-Source Voltage
± 20
V
ID
Drain Current (continuous) at Tc = 25 Single Operation
3
A
ID

Drain Current (continuous) at Tc = 100 Single Operation
1.9
A
IDM(`)
Drain Current (pulsed)
12
A
PTOT
Total Dissipation at TC = 25°CDual Operation
Total Dissipation at TC = 25°CSingle Operation

2.0
1.6

W
W

(`) Pulse width limited by safe operating area.


Description

This Power MOSFET STS3DNE60L is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transisto shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




Parameters:

Technical/Catalog InformationSTS3DNE60L
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 N-Channel (Dual)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C3A
Rds On (Max) @ Id, Vgs80 mOhm @ 1.5A, 10V
Input Capacitance (Ciss) @ Vds 815pF @ 25V
Power - Max2W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs13.5nC @ 4.5V
Package / Case8-SOIC (3.9mm Width)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STS3DNE60L
STS3DNE60L



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