STS3DPF60L

Mounting Style : SMD/SMT
Package / Case : SO-8
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Configuration : Dual Dual Drain
Drain-Source Breakdown Voltage : - 60 V
Gate-Source Breakdown Voltage : +/- 16 V
Continuous Drain Current : 3 A
Resistance Drain-Source RDS (on) : 0.12 Ohms


Features:

· TYPICAL RDS(on) = 0.10 Ω @ 10V
· STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLYY
· LOW THRESHOLD DRIVE


Application

DC-DC CONVERTERS


Pinout




Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	60	V
VDGR	Drain- gate Voltage (RGS = 20 k)	60	V
VGS	Gate-Source Voltage	± 16	V
ID	Drain Current (continuous) at Tc = 25	3	A
ID	Drain Current (continuous) at Tc = 100	1.9	A
IDM(`)	Drain Current (pulsed)	12	A
PTOT	Total Dissipation at Tc = 25	2	W
Tstg	Storage Temperature	-55 to 150
Tj	Max. Operating Junction Temperature

(•)Pulse width limited by safe operating area .



Description

This  MOSFET STS3DPF60L is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transisto shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Parameters:

Technical/Catalog Information	STS3DPF60L
Vendor	STMicroelectronics (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 P-Channel (Dual)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	3A
Rds On (Max) @ Id, Vgs	120 mOhm @ 1.5A, 10V
Input Capacitance (Ciss) @ Vds	630pF @ 25V
Power - Max	2W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	15.7nC @ 4.5V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STS3DPF60L STS3DPF60L 497 4123 1 ND 49741231ND 497-4123-1