STS3DPFS30

Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Package / Case : SO-8
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : - 30 V
Resistance Drain-Source RDS (on) : 0.09 Ohms
Continuous Drain Current : 3 A
Configuration : Single Dual Drain


Pinout




Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	30	V
VDGR	Drain- gate Voltage (RGS = 20 k)	30	V
VGS	Gate-Source Voltage	± 20	V
ID	Drain Current (continuous) at Tc = 25	3	A
ID	Drain Current (continuous) at Tc = 100	1.9	A
IDM(`)	Drain Current (pulsed)	12	A
PTOT	Total Dissipation at Tc = 25	2	W

(•)Pulse width limited by safe operating area


Description

This STS3DPFS30 associates the latest low voltage StripFET^TM in p-channel version to a low drop Schottky diode. Such configuration is extremely versatile in implementing, a large variety of DC-DC converters for printers, portable equipment, and cellular phones.