STS5PF20V

Mounting Style : SMD/SMT
Package / Case : SO-8
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Gate-Source Breakdown Voltage : +/- 8 V
Resistance Drain-Source RDS (on) : 0.08 Ohms
Continuous Drain Current : 5 A


Features:

` TYPICAL R<sub>DS</sub>(on) = 0.065 (@4.5V)
` TYPICAL R_DS(on) = 0.085 (@2.5V)
` ULTRA LOW THRESHOLD GATE DRIVE (2.5V)
` STANDARD OUTLINE FOR EASY
    AUTOMATED SURFACE MOUNT ASSEMBLY 


Application

· POWER MANAGEMENT IN CELLULAR PHONES
· DC-DC CONVERTERS
· BATTERY MANAGEMENT IN NOMADIC EQUIPMENT


Specifications

Symbol	Parameter	Value		Unit
VDS	Drain-source Voltage (VGS = 0)	20		V
VDGR	Drain-gate Voltage (RGS = 20 k)	20		V
VGS	Gate- source Voltage	± 8		V
ID	Drain Current (continuous) at TC = 25°C	5		A
ID	Drain Current (continuous) at TC = 100°C	3.1		A
IDM (`)	Drain Current (pulsed)	20		A
PTOT	Total Dissipation at TC = 25°C	2.5		W

(`) Pulse width limited by safe operating area
Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed



Description

This Power MOSFET STS5PF20V is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely extremely low on-resistance when driven at 2.5V.

Parameters:

Technical/Catalog Information	STS5PF20V
Vendor	STMicroelectronics (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	5A
Rds On (Max) @ Id, Vgs	80 mOhm @ 2.5A, 4.5V
Input Capacitance (Ciss) @ Vds	412pF @ 15V
Power - Max	2.5W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	6nC @ 2.5V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Logic Level Gate
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	STS5PF20V STS5PF20V 497 3230 6 ND 49732306ND 497-3230-6